Surface electronic properties of Na/Ge(111)-3x1

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The electronic properties of Na overlayers on Ge(111) are investigated using ultraviolet photoemission spectroscopy. Adsorption of Na atoms on Ge(111)-c(2 x 8) and Na/Ge(111)-3 x 1 surfaces does not change the semiconducting surface property. The Na/Ge(111)-3 x 1 surface is characterized using photoemission of adsorbed xenon. The local work function measurement shows that there are two different sites in (3 x 1) surface. One is close to Na atoms and its local work function is 0.48 eV lower than that of the other site. This Na-induced short range interacting area is about 33% of total surface, which indicates that the Na coverage of the (3 x 1) phase is about 1/3 ML.
Publisher
ELSEVIER SCIENCE BV
Issue Date
1996-05
Language
English
Article Type
Letter
Keywords

SI(111) SURFACE; STRUCTURAL TRANSFORMATION; SYNCHROTRON RADIATION; ADSORBED XENON; PHOTOEMISSION; GE(111); RECONSTRUCTION; NA; ADSORPTION; INTERFACES

Citation

SURFACE SCIENCE, v.351, no.1-3, pp.239 - 244

ISSN
0039-6028
URI
http://hdl.handle.net/10203/11356
Appears in Collection
CH-Journal Papers(저널논문)
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