16-GHZ BANDWIDTH INALAS-INGAAS MONOLITHICALLY INTEGRATED P-I-N/HBT PHOTORECEIVER

A monolithically integrated p-i-n transimpedance-amplifier photoreceiver based on an InAlAs-InGaAs HBT structure lattice-matched to InP has been designed, fabricated, and characterized, The p-i-n photodiode is implemented using the InGaAs base and collector layers of the I-IBT. A three-stage amplifier with a feedback resistance of 550 Ohm demonstrated a transimpedance gain of 46 dB Ohm and a bandwidth of 20 GHz, corresponding to a transimpedance-bandwidth product of 4 THz Ohm. The measured -3 dB bandwidth of the integrated photoreceiver is 16 GHz, which is the highest reported to date for an InAlAs-InGaAs p-i-n/HBT monolithically integrated photoreceiver and is sufficient for 20-Gb/s operation.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
1995-11
Language
ENG
Citation

IEEE PHOTONICS TECHNOLOGY LETTERS, v.7, no.11, pp.1339 - 1341

ISSN
1041-1135
DOI
10.1109/68.473491
URI
http://hdl.handle.net/10203/1135
Appears in Collection
EE-Journal Papers(저널논문)
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