High f(max) InP double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE

We report the performance of InP Double Heterojunction Bipolar Transistors (DHBT's) with a chirped InGaAs/InP superlattice B-C junction grown by CBE, The B-C junction of the DHBT was graded with a 10-period InGaAs/InP chirped superlattice (CSL) between the InGaAs base and the lightly doped InP collector. A highly doped thin layer was also included at the end of the CSL to offset the quasi-electric field arising from the grade and suppress further the carrier blocking effect across the B-C heterojunction, The InP/InGaAs CSL DHBT demonstrated a high BVCEO of 18.3 V with a typical current gain of 55 with minimal carrier blocking up to high current densities, Maximum cutoff frequencies of f(max) = 146 GHz and f(T) = 71 GHz were obtained from the fabricated 2 x 10 mu m(2)-emitter DHBT.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
1997-11
Language
ENG
Keywords

PERFORMANCE; DESIGN

Citation

IEEE ELECTRON DEVICE LETTERS, v.18, no.11, pp.553 - 555

ISSN
0741-3106
DOI
10.1109/55.641443
URI
http://hdl.handle.net/10203/1131
Appears in Collection
EE-Journal Papers(저널논문)
  • Hit : 414
  • Download : 133
  • Cited 0 times in thomson ci
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡClick to seewebofscience_button
⊙ Cited 21 items in WoSClick to see citing articles inrecords_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0