High dynamic-range CMOS image sensor cell based on self-adaptive photosensing operation

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This brief presents the performance characteristics of a new CMOs active pixel structure based on a self-adaptive light-sensing operation, which is implemented using a standard 0.35-mu m CMOS logic process. In order to improve the dynamic range (DR) as well as the sensitivity at low illumination intensity, a new photogate structure is proposed and incorporated into the pixel structure. At an optimum bias condition of the photogate, the DR was increased by,more than three times and the sensitivity at low illumination intensity was improved by two times compared to the conventional structure. The new pixel structure is found to allow simultaneous improvements in both the DR and the sensitivity without any process modification.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2006-07
Language
ENG
Article Type
Article
Keywords

LOGARITHMIC RESPONSE; DIGITAL OUTPUT; RESET; NOISE; PHOTODIODE; PIXELS

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.53, no.7, pp.1733 - 1735

ISSN
0018-9383
DOI
10.1109/TED.2006.875805
URI
http://hdl.handle.net/10203/1130
Appears in Collection
EE-Journal Papers(저널논문)
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