Sub-1-V supply self-adaptive CMOS image sensor cell with 86-dB dynamic range

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This letter presents a high dynamic range CMOS active pixel structure operating at a sub-1-V supply voltage, which is implemented using a standard 0.18-mu m CMOS logic process. In order to improve the output voltage swing range and associated pixel dynamic range at a low supply voltage, a pMOS reset struc ture is incorporated into the pixel structure along with a photogate pixel structure based on the self-adaptive photosensing operation. At a low supply voltage of 0.9 V, the new pixel provides an output voltage swing range of 0.41 V and a high dynamic range of 86 dB, which is the highest among the reported pixel structures up to date operating at sub-1-V.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2007-06
Language
ENG
Article Type
Article
Appears in Collection
EE-Journal Papers(저널논문)
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