Power performance of InP-based single and double heterojunction bipolar transistors

The microwave and power performance of fabricated InP-based single and double heterojunction bipolar transistors (HBT's) is presented. The single heterojunction bipolar transistors (SHBT's), which had a 5000-Angstrom InGaAs collector, had BVCE0 of 7.2 V and J(Cmax) of 2 x 10(5) A/cm(2). The resulting HBT's with 2 x 10 mu m(2) emitters produced up to 1.1 mW/mu m(2) at 8 GHz with efficiencies over 30%, Double heterojunction bipolar transistors (DHBT's) with a 3000-Angstrom InP collector had a BVCE0 of 9 V and J(Cmax) of 1.1 x 10(5) A/cm(2), resulting in power densities up to 1.9 mW/mu m(2) at 8 GHz and a peak efficiency of 46%. Similar DHBT's with a 6000-Angstrom InP collector had a higher BVCE0 of 18 V, but the J(Cmax) decreased to 0.4 x 10(5) A/cm(2) due to current blocking at the base-collector junction. Although: the 6000-Angstrom InP collector provided higher f(max) and gain than the 3000-Angstrom collector, the lower J(Cmax) reduced its maximum power density below that of the SHBT wafer. The impact on power performance of various device characteristics, such as knee voltage, breakdown voltage, and maximum current density, are analyzed and discussed.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
1999-08
Language
ENG
Citation

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.47, no.8, pp.1449 - 1456

ISSN
0018-9480
DOI
10.1109/22.780393
URI
http://hdl.handle.net/10203/1092
Appears in Collection
EE-Journal Papers(저널논문)
  • Hit : 286
  • Download : 92
  • Cited 0 times in thomson ci
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡClick to seewebofscience_button
⊙ Cited 9 items in WoSClick to see citing articles inrecords_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0