DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yang, Kyounghoon | ko |
dc.contributor.author | COWLES, JC | ko |
dc.contributor.author | EAST, JR | ko |
dc.contributor.author | HADDAD, GI | ko |
dc.date.accessioned | 2007-08-21T08:13:08Z | - |
dc.date.available | 2007-08-21T08:13:08Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1995-06 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.42, no.6, pp.1047 - 1058 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/1089 | - |
dc.description.abstract | The de characteristics of InP/InGaAs and InAlAs/InGaAs HBT's with abrupt emitter-base junctions are studied using a thermionic-field emission boundary-condition model, The model incorporates tunneling and emission into a one-dimensional drift-diffusion scheme and accounts for breakdown and bulk recombination mechanisms, The effects of abrupt heterojunction transport and electrical junction displacement on the current gain h(FE) and on the turn-on voltage are investigated, The simulations indicate that the spacer layer design has a profound effect on the de behavior of these devices, A detailed performance comparison of different emitter structures indicates that InP-emitter HBT's show a more uniform h(FE) than InAlAs-emitter HBT's especially at low current densities, Experimental data from a fabricated InAlAs/InGaAs abrupt emitter single HBT was compared to the theoretical predictions of the model, The analysis reveals that several injection and recombination mechanisms are responsible for the emitter-base forward characteristics. In the collector, the exact velocity-field profile and an anomalous multiplication factor are responsible for kinks in the output common-emitter characteristics and for soft breakdown of the collector-base junction, | - |
dc.description.sponsorship | U.S. Army Research Office under URI program | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | HETEROJUNCTION BIPOLAR-TRANSISTORS | - |
dc.subject | IMPACT IONIZATION COEFFICIENTS | - |
dc.subject | TEMPERATURE-DEPENDENCE | - |
dc.subject | COLLECTOR BREAKDOWN | - |
dc.subject | ELECTRON-TRANSPORT | - |
dc.subject | BOUNDARY-CONDITION | - |
dc.subject | MONTE-CARLO | - |
dc.subject | HETEROSTRUCTURE | - |
dc.subject | ALGAAS/GAAS | - |
dc.subject | ALINAS/GAINAS | - |
dc.title | THEORETICAL AND EXPERIMENTAL DC CHARACTERIZATION OF INGAAS-BASED ABRUPT EMITTER HBTS | - |
dc.type | Article | - |
dc.identifier.wosid | A1995QZ20000005 | - |
dc.type.rims | ART | - |
dc.citation.volume | 42 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 1047 | - |
dc.citation.endingpage | 1058 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Yang, Kyounghoon | - |
dc.contributor.nonIdAuthor | COWLES, JC | - |
dc.contributor.nonIdAuthor | EAST, JR | - |
dc.contributor.nonIdAuthor | HADDAD, GI | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | HETEROJUNCTION BIPOLAR-TRANSISTORS | - |
dc.subject.keywordPlus | IMPACT IONIZATION COEFFICIENTS | - |
dc.subject.keywordPlus | TEMPERATURE-DEPENDENCE | - |
dc.subject.keywordPlus | COLLECTOR BREAKDOWN | - |
dc.subject.keywordPlus | ELECTRON-TRANSPORT | - |
dc.subject.keywordPlus | BOUNDARY-CONDITION | - |
dc.subject.keywordPlus | MONTE-CARLO | - |
dc.subject.keywordPlus | HETEROSTRUCTURE | - |
dc.subject.keywordPlus | ALGAAS/GAAS | - |
dc.subject.keywordPlus | ALINAS/GAINAS | - |
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