Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers

Fabrication and characterization of monolithically integrated SiGe-Si PIN-HBT transimpedance photoreceivers are reported, SiGe-Si technology has been developed leading to SiGe-Si HBT's with f(T) = 23 GHz and f(max) = 34 GHz, and to PIN photodiodes with responsivity of 0.3 A/W at lambda = 850 nm and bandwidth of 450 MHz, SiGe-Si HBT transimpedance amplifiers showed transimpedance gain of 52.2 dB.Omega and bandwidth of 1.6 GHz, and the photoreceivers exhibited the bandwidth of 460 MHz.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
1998-03
Language
ENG
Keywords

1.3 MU-M; PHOTODETECTORS; PHOTODIODE

Citation

IEEE PHOTONICS TECHNOLOGY LETTERS, v.10, no.3, pp.415 - 417

ISSN
1041-1135
DOI
10.1109/68.661428
URI
http://hdl.handle.net/10203/1087
Appears in Collection
EE-Journal Papers(저널논문)
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