Improved Charge Pump with Reduced Reverse Current

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A highly efficient charge pump that minimizes the reverse charge sharing current (in short, reverse current) is proposed. The charge pump employs auxiliary capacitors and diode-connected MOSFET along with an early clock to drive the charge transfer switches; this new method provides better isolation between stages. As a result, the amount of reverse current is reduced greatly and the clock driver can be designed with reduced transition slope. As a proof of the concept, a 1.1V-to-9.8 V charge pump was designed in a 0.35 mu m 18 V CMOS technology. The proposed architecture shows 1.6 V similar to 3.5 V higher output voltage compared with the previously reported architecture.
Publisher
IEEK PUBLICATION CENTER
Issue Date
2012-09
Language
English
Article Type
Article
Citation

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.12, no.3, pp.353 - 359

ISSN
1598-1657
DOI
10.5573/JSTS.2012.12.3.353
URI
http://hdl.handle.net/10203/104465
Appears in Collection
EE-Journal Papers(저널논문)
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