DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Seongmin | ko |
dc.contributor.author | Janes, David B. | ko |
dc.contributor.author | Choi, Sung-Yool | ko |
dc.contributor.author | Ju, Sanghyun | ko |
dc.date.accessioned | 2013-03-13T03:39:15Z | - |
dc.date.available | 2013-03-13T03:39:15Z | - |
dc.date.created | 2012-10-30 | - |
dc.date.created | 2012-10-30 | - |
dc.date.created | 2012-10-30 | - |
dc.date.issued | 2012-08 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.101, no.6 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/104385 | - |
dc.description.abstract | Here we report on the metal semiconductor junction characteristics of a semiconducting ZnO nanowire grown directly on a metallic graphene film. The extracted specific contact resistivity of the graphene ZnO nanowire contact (1.5 x 10(-5) Omega-cm(2)) is comparable to that reported for Al-ZnO contacts. Based on the assumption that thermionic-field emission is the dominant mechanism, we obtained a zero-bias effective barrier height of 0.413 eV for the graphene ZnO nanowire Schottky contact. We thus demonstrate that as a result of the enhanced tunneling at the contact, the graphene nanowire contact exhibits near-ohmic current voltage characteristics with a low contact resistance. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745210] | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Nanoscale contacts between semiconducting nanowires and metallic graphenes | - |
dc.type | Article | - |
dc.identifier.wosid | 000307862400085 | - |
dc.identifier.scopusid | 2-s2.0-84865109363 | - |
dc.type.rims | ART | - |
dc.citation.volume | 101 | - |
dc.citation.issue | 6 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.4745210 | - |
dc.contributor.localauthor | Choi, Sung-Yool | - |
dc.contributor.nonIdAuthor | Kim, Seongmin | - |
dc.contributor.nonIdAuthor | Janes, David B. | - |
dc.contributor.nonIdAuthor | Ju, Sanghyun | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | OHMIC CONTACTS | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | ZNO | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | RESISTANCE | - |
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