DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Min Su | ko |
dc.contributor.author | Lee, Hee Chul | ko |
dc.date.accessioned | 2013-03-13T02:21:57Z | - |
dc.date.available | 2013-03-13T02:21:57Z | - |
dc.date.created | 2012-12-03 | - |
dc.date.created | 2012-12-03 | - |
dc.date.issued | 2012-11 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.61, no.10, pp.1670 - 1674 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | http://hdl.handle.net/10203/104233 | - |
dc.description.abstract | To overcome the total ionizing dose effect on an n-type metal-oxide-semiconductor field-effect transistor (n-MOSFET), we designed a radiation-hardened gate-around n-MOSFET structure and evaluated it through a radiation-exposure experiment. Each test device was fabricated in a commercial 0.35-micron complementary metal-oxide-semiconductor (CMOS) process. The fabricated devices were evaluated under a total dose of 1 Mrad (Si) at a dose rate of 250 krad/h to obtain very high reliability for space electronics. The experimental results showed that the gate-around n-MOSFET structure had very good performance against 1 Mrad (Si) of gamma radiation, while the conventional n-MOSFET experienced a considerable amount of radiation-induced leakage current. Furthermore, a source follower designed with the gate-around transistor worked properly at 1 Mrad (Si) of gamma radiation while a source follower designed with the conventional n-MOSFET lost its functionality. | - |
dc.language | English | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | OXIDES | - |
dc.subject | LAYOUT | - |
dc.subject | CMOS | - |
dc.title | Radiation-hardened gate-around n-MOSFET structure for radiation-tolerant application-specific integrated circuits | - |
dc.type | Article | - |
dc.identifier.wosid | 000312341100024 | - |
dc.identifier.scopusid | 2-s2.0-84870810618 | - |
dc.type.rims | ART | - |
dc.citation.volume | 61 | - |
dc.citation.issue | 10 | - |
dc.citation.beginningpage | 1670 | - |
dc.citation.endingpage | 1674 | - |
dc.citation.publicationname | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.identifier.doi | 10.3938/jkps.61.1670 | - |
dc.contributor.localauthor | Lee, Hee Chul | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Radiation-hardened electronics | - |
dc.subject.keywordAuthor | Gamma radiation | - |
dc.subject.keywordAuthor | Total ionizing dose | - |
dc.subject.keywordAuthor | Space electronics | - |
dc.subject.keywordAuthor | Source follower | - |
dc.subject.keywordAuthor | Space radiation | - |
dc.subject.keywordAuthor | Radiation-tolerant | - |
dc.subject.keywordPlus | OXIDES | - |
dc.subject.keywordPlus | LAYOUT | - |
dc.subject.keywordPlus | CMOS | - |
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