Radiation-hardened gate-around n-MOSFET structure for radiation-tolerant application-specific integrated circuits

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To overcome the total ionizing dose effect on an n-type metal-oxide-semiconductor field-effect transistor (n-MOSFET), we designed a radiation-hardened gate-around n-MOSFET structure and evaluated it through a radiation-exposure experiment. Each test device was fabricated in a commercial 0.35-micron complementary metal-oxide-semiconductor (CMOS) process. The fabricated devices were evaluated under a total dose of 1 Mrad (Si) at a dose rate of 250 krad/h to obtain very high reliability for space electronics. The experimental results showed that the gate-around n-MOSFET structure had very good performance against 1 Mrad (Si) of gamma radiation, while the conventional n-MOSFET experienced a considerable amount of radiation-induced leakage current. Furthermore, a source follower designed with the gate-around transistor worked properly at 1 Mrad (Si) of gamma radiation while a source follower designed with the conventional n-MOSFET lost its functionality.
Publisher
KOREAN PHYSICAL SOC
Issue Date
2012-11
Language
English
Article Type
Article
Keywords

OXIDES; LAYOUT; CMOS

Citation

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.61, no.10, pp.1670 - 1674

ISSN
0374-4884
DOI
10.3938/jkps.61.1670
URI
http://hdl.handle.net/10203/104233
Appears in Collection
EE-Journal Papers(저널논문)
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