DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Ju-Hyun | ko |
dc.contributor.author | Moon, Han-Ul | ko |
dc.contributor.author | Yoo, Seung-Hyup | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2013-03-12T21:48:47Z | - |
dc.date.available | 2013-03-12T21:48:47Z | - |
dc.date.created | 2012-07-05 | - |
dc.date.created | 2012-07-05 | - |
dc.date.issued | 2011-08 | - |
dc.identifier.citation | SMALL, v.7, no.15, pp.2210 - 2216 | - |
dc.identifier.issn | 1613-6810 | - |
dc.identifier.uri | http://hdl.handle.net/10203/103622 | - |
dc.description.abstract | A novel nanogap fabrication method using an electrochemical nanopatterning technique is presented. Electrochemical deposition of platinum ions reduces the microgap size to the sub-50-nm range due to the self-limited volume expansion of the electrodes. Additionally, the low crystallinity of platinum reduces the line edge roughness in the electrodes, whereas the high crystallinity of gold increases it. Current compliance, a buffered resistor, and a symmetric deposition strategy are used to achieve high reliability and practicality of nanogap electrodes. As a possible application, an organic thin-film transistor using the nanogap electrodes is also demonstrated. | - |
dc.language | English | - |
dc.publisher | WILEY-BLACKWELL | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | DIP-PEN NANOLITHOGRAPHY | - |
dc.subject | METALLIC ELECTRODES | - |
dc.subject | MOLECULAR RULERS | - |
dc.subject | COULOMB-BLOCKADE | - |
dc.subject | SEPARATION | - |
dc.subject | ELECTROMIGRATION | - |
dc.subject | NANOSTRUCTURES | - |
dc.subject | LITHOGRAPHY | - |
dc.subject | CONTACTS | - |
dc.title | Nanogap Electrode Fabrication for a Nanoscale Device by Volume-Expanding Electrochemical Synthesis | - |
dc.type | Article | - |
dc.identifier.wosid | 000294361200012 | - |
dc.identifier.scopusid | 2-s2.0-80051542669 | - |
dc.type.rims | ART | - |
dc.citation.volume | 7 | - |
dc.citation.issue | 15 | - |
dc.citation.beginningpage | 2210 | - |
dc.citation.endingpage | 2216 | - |
dc.citation.publicationname | SMALL | - |
dc.identifier.doi | 10.1002/smll.201002103 | - |
dc.contributor.localauthor | Yoo, Seung-Hyup | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | DIP-PEN NANOLITHOGRAPHY | - |
dc.subject.keywordPlus | METALLIC ELECTRODES | - |
dc.subject.keywordPlus | MOLECULAR RULERS | - |
dc.subject.keywordPlus | COULOMB-BLOCKADE | - |
dc.subject.keywordPlus | SEPARATION | - |
dc.subject.keywordPlus | ELECTROMIGRATION | - |
dc.subject.keywordPlus | NANOSTRUCTURES | - |
dc.subject.keywordPlus | LITHOGRAPHY | - |
dc.subject.keywordPlus | CONTACTS | - |
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