Fabrication and Characterization of Ferroelectric Poly(Vinylidene Fluoride-Trifluoroethylene) (P(VDF-TrFE)) Thin Film on Flexible Substrate by Detach-and-Transferring

Cited 2 time in webofscience Cited 0 time in scopus
  • Hit : 309
  • Download : 64
In this paper, a 60 nm-thick ferroelectric film of poly(vinylidene fluoride trifluoroethylene) on a flexible substrate of aluminum foil was fabricated and characterized. Compared to pristine silicon wafer, Al-foil has very large root-mean-square (RMS) roughness, thus presenting challenges for the fabrication of flat and uniform electronic devices on such a rough substrate. In particular, RMS roughness affects the leakage current of dielectrics, the uniformity of devices, and the switching time in ferroelectrics. To avoid these kinds of problems, a new thin film fabrication method adopting a detach-and-transfer technique has been developed. Here, 'detach' means that the ferroelectric film is detached from a flat substrate (sacrificial substrate), and 'transfer' refers to the process of the detached film being moved onto the rough substrate (main substrate). To characterize the dielectric property of the transferred film, polarization and voltage relationships were measured, and the results showed that a hysteresis loop could be obtained with low leakage current.
Publisher
IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
Issue Date
2012-05
Language
English
Article Type
Article
Citation

IEICE TRANSACTIONS ON ELECTRONICS, v.E95C, no.5, pp.860 - 864

ISSN
0916-8524
DOI
10.1587/transele.E95.C.860
URI
http://hdl.handle.net/10203/103558
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 2 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0