In this paper, a 60 nm-thick ferroelectric film of poly(vinylidene fluoride trifluoroethylene) on a flexible substrate of aluminum foil was fabricated and characterized. Compared to pristine silicon wafer, Al-foil has very large root-mean-square (RMS) roughness, thus presenting challenges for the fabrication of flat and uniform electronic devices on such a rough substrate. In particular, RMS roughness affects the leakage current of dielectrics, the uniformity of devices, and the switching time in ferroelectrics. To avoid these kinds of problems, a new thin film fabrication method adopting a detach-and-transfer technique has been developed. Here, 'detach' means that the ferroelectric film is detached from a flat substrate (sacrificial substrate), and 'transfer' refers to the process of the detached film being moved onto the rough substrate (main substrate). To characterize the dielectric property of the transferred film, polarization and voltage relationships were measured, and the results showed that a hysteresis loop could be obtained with low leakage current.