Recrystallization-induced void migration in electroplated Cu films
During the annealing of electroplated Cu at 300-400 degrees C, voids nucleated at the film/substrate interface and migrated toward the film-free surface as the recrystallization proceeded. Voids were located at the recrystallized/unrecrystallized (R/UR) interface and served as markers of the interface motion. Kinetics of the R/UR interface migration showed t(1/2) dependence, suggesting that the recrystallization of the electroplated Cu was controlled by the long-range diffusion of atoms through high-diffusivity paths, such as grain boundaries and dislocation cores. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Issue Date
- 2012-08
- Language
- English
- Article Type
- Article
- Keywords
ABNORMAL GRAIN-GROWTH; COPPER THIN-FILMS; STRESS; STRAIN
- Citation
SCRIPTA MATERIALIA, v.67, no.4, pp.312 - 315
- ISSN
- 1359-6462
- Appears in Collection
- MS-Journal Papers(저널논문)
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