GaN-based pin diodes for microwave switching IC applications
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yang, Jung-Gil | ko |
| dc.contributor.author | Yang, Kyoung-Hoon | ko |
| dc.date.accessioned | 2013-03-12T18:07:42Z | - |
| dc.date.available | 2013-03-12T18:07:42Z | - |
| dc.date.created | 2012-08-08 | - |
| dc.date.created | 2012-08-08 | - |
| dc.date.issued | 2012-05 | - |
| dc.identifier.citation | ELECTRONICS LETTERS, v.48, no.11, pp.650 - 652 | - |
| dc.identifier.issn | 0013-5194 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/103099 | - |
| dc.description.abstract | GaN-based pin diodes were fabricated and characterised for microwave switching IC applications. The fabricated GaN pin diode with a p-metal diameter of 50 mu m demonstrated a 3.8 V turn-on voltage, a 370 V breakdown voltage and a power figure of merit value of 178.5 MW/cm(2) with an on-state resistance of 29 Omega and an off-state capacitance of 47 fF. To the authors' best knowledge, this result is the first RF characterisation of the GaN pin diode for microwave IC applications. | - |
| dc.language | English | - |
| dc.publisher | INST ENGINEERING TECHNOLOGY-IET | - |
| dc.title | GaN-based pin diodes for microwave switching IC applications | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000304421900032 | - |
| dc.identifier.scopusid | 2-s2.0-84861632366 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 48 | - |
| dc.citation.issue | 11 | - |
| dc.citation.beginningpage | 650 | - |
| dc.citation.endingpage | 652 | - |
| dc.citation.publicationname | ELECTRONICS LETTERS | - |
| dc.identifier.doi | 10.1049/el.2012.0954 | - |
| dc.embargo.liftdate | 9999-12-31 | - |
| dc.embargo.terms | 9999-12-31 | - |
| dc.contributor.localauthor | Yang, Kyoung-Hoon | - |
| dc.type.journalArticle | Article | - |
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