GaN-based pin diodes for microwave switching IC applications

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dc.contributor.authorYang, Jung-Gilko
dc.contributor.authorYang, Kyoung-Hoonko
dc.date.accessioned2013-03-12T18:07:42Z-
dc.date.available2013-03-12T18:07:42Z-
dc.date.created2012-08-08-
dc.date.created2012-08-08-
dc.date.issued2012-05-
dc.identifier.citationELECTRONICS LETTERS, v.48, no.11, pp.650 - 652-
dc.identifier.issn0013-5194-
dc.identifier.urihttp://hdl.handle.net/10203/103099-
dc.description.abstractGaN-based pin diodes were fabricated and characterised for microwave switching IC applications. The fabricated GaN pin diode with a p-metal diameter of 50 mu m demonstrated a 3.8 V turn-on voltage, a 370 V breakdown voltage and a power figure of merit value of 178.5 MW/cm(2) with an on-state resistance of 29 Omega and an off-state capacitance of 47 fF. To the authors' best knowledge, this result is the first RF characterisation of the GaN pin diode for microwave IC applications.-
dc.languageEnglish-
dc.publisherINST ENGINEERING TECHNOLOGY-IET-
dc.titleGaN-based pin diodes for microwave switching IC applications-
dc.typeArticle-
dc.identifier.wosid000304421900032-
dc.identifier.scopusid2-s2.0-84861632366-
dc.type.rimsART-
dc.citation.volume48-
dc.citation.issue11-
dc.citation.beginningpage650-
dc.citation.endingpage652-
dc.citation.publicationnameELECTRONICS LETTERS-
dc.identifier.doi10.1049/el.2012.0954-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorYang, Kyoung-Hoon-
dc.type.journalArticleArticle-
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