GaN-based pin diodes for microwave switching IC applications

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GaN-based pin diodes were fabricated and characterised for microwave switching IC applications. The fabricated GaN pin diode with a p-metal diameter of 50 mu m demonstrated a 3.8 V turn-on voltage, a 370 V breakdown voltage and a power figure of merit value of 178.5 MW/cm(2) with an on-state resistance of 29 Omega and an off-state capacitance of 47 fF. To the authors' best knowledge, this result is the first RF characterisation of the GaN pin diode for microwave IC applications.
Publisher
INST ENGINEERING TECHNOLOGY-IET
Issue Date
2012-05
Language
English
Article Type
Article
Citation

ELECTRONICS LETTERS, v.48, no.11, pp.650 - 652

ISSN
0013-5194
DOI
10.1049/el.2012.0954
URI
http://hdl.handle.net/10203/103099
Appears in Collection
EE-Journal Papers(저널논문)
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