Improvement of Charge Retention in Flash Memory Devices by Very Light Doping of Lanthanum into an Aluminum-Oxide Blocking Layer

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It is demonstrated that the dielectric constant of Al2O3 is significantly increased through the addition of a very small amount of La into Al2O3 followed by a high-temperature post-deposition annealing (PDA). The retention property and reliability of the charge trap flash memory devices fabricated through the proposed method are greatly improved due to the increased kappa-value of the Al2O3 blocking oxide with no sacrifice of the bandgap, as well as a reduced low-field leakage component and improved dielectric relaxation effect. (c) 2012 The Japan Society of Applied Physics
Publisher
JAPAN SOC APPLIED PHYSICS
Issue Date
2012-08
Language
English
Article Type
Article
Keywords

HIGH-K DIELECTRICS; AL2O3; GAP

Citation

APPLIED PHYSICS EXPRESS, v.5, no.8

ISSN
1882-0778
DOI
10.1143/APEX.5.081102
URI
http://hdl.handle.net/10203/102936
Appears in Collection
EE-Journal Papers(저널논문)
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