Construction and characterization of an amorphous silicon flat-panel detector based on ion-shower doping process

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dc.contributor.authorKim, HJko
dc.contributor.authorKim, HKko
dc.contributor.authorCho, Gyuseongko
dc.contributor.authorChoi, Jko
dc.date.accessioned2009-07-27T02:23:43Z-
dc.date.available2009-07-27T02:23:43Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2003-06-
dc.identifier.citationNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, v.505, no.1-2, pp.155 - 158-
dc.identifier.issn0168-9002-
dc.identifier.urihttp://hdl.handle.net/10203/10286-
dc.description.abstractIn this paper, we introduce a new 36 x 43 cm(2) amorphous silicon flat-panel detector for digital radiography. A prototype flat-panel detector was fabricated using a p-i-n photodiode/thin-film transistor (TFT) array. The main difference of this flat panel detector to the similar general flat-panel detectors is p-i-n photodiode fabrication method. The p-layer of diode is formed using an ion shower doping method instead of the conventional PECVD method to increase the quality of array. The diode shows a leakage current of 2 pA/mm(2) at -5 V and dark current uniformity of the detector is 2.5%. The modulation transfer function (MTF) of the detector is 0.41 at 2 lp/mm. (C) 2003 Elsevier Science B.V. All rights reserved.-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherELSEVIER SCIENCE BV-
dc.subjectLARGE-AREA-
dc.subjectRADIOGRAPHY-
dc.subjectSYSTEMS-
dc.titleConstruction and characterization of an amorphous silicon flat-panel detector based on ion-shower doping process-
dc.typeArticle-
dc.identifier.wosid000183713700037-
dc.identifier.scopusid2-s2.0-0038694610-
dc.type.rimsART-
dc.citation.volume505-
dc.citation.issue1-2-
dc.citation.beginningpage155-
dc.citation.endingpage158-
dc.citation.publicationnameNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorCho, Gyuseong-
dc.contributor.nonIdAuthorKim, HJ-
dc.contributor.nonIdAuthorKim, HK-
dc.contributor.nonIdAuthorChoi, J-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordAuthorflat-panel detector-
dc.subject.keywordAuthoramorphous silicon-
dc.subject.keywordPlusLARGE-AREA-
dc.subject.keywordPlusRADIOGRAPHY-
dc.subject.keywordPlusSYSTEMS-
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