Construction and characterization of an amorphous silicon flat-panel detector based on ion-shower doping process

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In this paper, we introduce a new 36 x 43 cm(2) amorphous silicon flat-panel detector for digital radiography. A prototype flat-panel detector was fabricated using a p-i-n photodiode/thin-film transistor (TFT) array. The main difference of this flat panel detector to the similar general flat-panel detectors is p-i-n photodiode fabrication method. The p-layer of diode is formed using an ion shower doping method instead of the conventional PECVD method to increase the quality of array. The diode shows a leakage current of 2 pA/mm(2) at -5 V and dark current uniformity of the detector is 2.5%. The modulation transfer function (MTF) of the detector is 0.41 at 2 lp/mm. (C) 2003 Elsevier Science B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2003-06
Language
English
Article Type
Article; Proceedings Paper
Keywords

LARGE-AREA; RADIOGRAPHY; SYSTEMS

Citation

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, v.505, no.1-2, pp.155 - 158

ISSN
0168-9002
URI
http://hdl.handle.net/10203/10286
Appears in Collection
NE-Journal Papers(저널논문)
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