Bipolar resistive switching characteristics of poly(3,4-ethylene-dioxythiophene): Poly(styrenesulfonate) thin film

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We investigated the reversible resistive switching of poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) thin films sandwiched between Al electrodes. The J-V sweep curve showed a hysteretic behavior which depends on the polarity of the applied voltage bias. From the analysis of I-V curves, it was revealed that the charge transport through the junction was governed by the bulk space-charge-limited conduction (SCLC) model. Using transmission electron microscopy (TEM) analysis, it was confirmed that the initial high resistance state of PEDOT:PSS films is related with the segregation of PSS chains induced by redox reaction between a Al metal electrode and PEDOT:PSS film. Positive space charges present on the top region of PEDOT:PSS films can be proposed as a possible trap centers of electron trapping and detrapping process. (C) 2009 Elsevier B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2010-01
Language
English
Article Type
Article; Proceedings Paper
Keywords

MEMORY DEVICES; BISTABILITY

Citation

CURRENT APPLIED PHYSICS, v.10, no.1, pp.E46 - E49

ISSN
1567-1739
DOI
10.1016/j.cap.2009.12.011
URI
http://hdl.handle.net/10203/102685
Appears in Collection
EE-Journal Papers(저널논문)
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