A ZnO cross-bar array resistive random access memory stacked with heterostructure diodes for eliminating the sneak current effect

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We report cross-bar array resistive random access memory (RRAM) devices based on a ZnO thin film fabricated at room temperature. To prevent the sneak current path in a conventional cross-bar array device, two types of heterostructure diodes, a NiO/ZnO p-n junction and a WO3/ZnO tunnel barrier both stacked on cross-bar array RRAM were employed. With rectifying characteristics and high forward current density, the sneak current path was effectively eliminated. We believe that the proposed structures are promising for cross-bar type RRAM applications. c 2011 American Institute of Physics. [doi: 10.1063/1.3599707]
Publisher
AMER INST PHYSICS
Issue Date
2011-06
Language
English
Article Type
Article
Keywords

DENSITY NONVOLATILE MEMORY; ELECTRICAL-PROPERTIES; NIO

Citation

APPLIED PHYSICS LETTERS, v.98, no.23, pp.233505

ISSN
0003-6951
DOI
10.1063/1.3599707
URI
http://hdl.handle.net/10203/102463
Appears in Collection
EE-Journal Papers(저널논문)
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