Reduction of charge trapping in HfO2 film on a Ge substrate by trimethylaluminum pretreatment

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Trimethylaluminum pretreatment prior to HfO2 deposition is introduced for native oxide reduction. It is identified that the trimethylaluminum pretreatment could effectively reduce native oxide, which is transformed to an aluminum oxide interfacial layer. Formation of the thin aluminum oxide layer suppresses Ge diffusion into HfO2, reducing hysteresis in the ca- pacitancevoltage curve. Moreover, the device reliability of the trimethylaluminum pretreated sample is improved in a constant current stress test. This work indicates that trimethylaluminum pretreatment is an effective in-situ method for the gate dielectric stack formation to reduce charge trapping in the HfO2 film on a Ge substrate. (c) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Publisher
WILEY-V C H VERLAG GMBH
Issue Date
2012-11
Language
English
Article Type
Article
Keywords

PASSIVATION; DEPOSITION

Citation

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.6, no.11, pp.439 - 441

ISSN
1862-6254
DOI
10.1002/pssr.201206315
URI
http://hdl.handle.net/10203/102087
Appears in Collection
EE-Journal Papers(저널논문)
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