Photo-Curable Sol-Gel Hybrid Film as a Dielectric Layer by a Thiol-ene Reaction in Air or N-2 for Organic Thin Film Transistors

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Sol-gel derived oligosiloxane resins are cured under air or N-2 by a photo-initiated thiol-ene reaction. The cured film was fabricated as a dielectric layer for use in an organic thin film transistor, and offers a higher dielectric constant (4.13) than silicon dioxide (3.9). We investigated the effects of the curing conditions of a thiol-ene reaction on the TFT performance depending on air or N-2. In the N-2 conditions, hydroperoxide group (-OOH) free films were generated and they showed low leakage current density and hysteresis free behavior with higher mobility than those fabricated in air. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.021205esl] All rights reserved.
Publisher
ELECTROCHEMICAL SOC INC
Issue Date
2012-02
Language
English
Article Type
Article
Keywords

FIELD-EFFECT TRANSISTORS; GATE DIELECTRICS; ELECTRONICS; INSULATORS; CHEMISTRY

Citation

ELECTROCHEMICAL AND SOLID STATE LETTERS, v.15, no.5, pp.G13 - G15

ISSN
1099-0062
DOI
10.1149/2.021205esl
URI
http://hdl.handle.net/10203/101705
Appears in Collection
EE-Journal Papers(저널논문)MS-Journal Papers(저널논문)
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