Highly air-stable electrical performance of graphene field effect transistors by interface engineering with amorphous fluoropolymer

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Excellent stability on the electrical characteristics of graphene field effect transistors in an air ambient is achieved by inserting an amorphous fluoropolymer between the graphene channel and SiO(2) gate dielectric. The interface engineering exploits the highly water repellent property of the fluoropolymer stemming from high hydrophobicity and low moisture permeation, and results in negligible hole doping of graphene from absorption of water molecules. In addition, the graphene field effect transistors with the fluoropolymer/SiO(2) gate dielectric shows superior performances including negligible V(Dirac) hysteresis and highly stable carrier mobility, which are important characteristics for analog rf device applications. (C) 2011 American Institute of Physics. [doi:10.1063/1.3578396]
Publisher
AMER INST PHYSICS
Issue Date
2011-04
Language
English
Article Type
Article
Keywords

DEVICES

Citation

APPLIED PHYSICS LETTERS, v.98, no.15

ISSN
0003-6951
URI
http://hdl.handle.net/10203/101180
Appears in Collection
EE-Journal Papers(저널논문)
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