Dirac voltage tunability by Hf1-xLaxO gate dielectric composition modulation for graphene field effect devices

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We report that the Dirac voltage of graphene field effect transistors (FETs) can be tuned by controlling the composition of hafnium lanthanum oxide (HfLaO) gate dielectrics. As the lanthanum percentage is increased in the HfLaO film, the charge neutrality point of the graphene FET is gradually shifted in the negative direction. The origin of this tuning is attributed to the hygroscopic nature of the lanthanum oxide, as it is found that lanthanum oxide in the HfLaO film absorbs water molecules below the graphene channel, resulting in the suppression of the p-doping in graphene. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3659691]
Publisher
AMER INST PHYSICS
Issue Date
2011-11
Language
English
Article Type
Article
Keywords

ELECTRICAL-PROPERTIES; EPITAXIAL-GRAPHENE; TRANSISTORS; SI

Citation

APPLIED PHYSICS LETTERS, v.99, no.19

ISSN
0003-6951
DOI
10.1063/1.3659691
URI
http://hdl.handle.net/10203/101179
Appears in Collection
EE-Journal Papers(저널논문)
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