DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Chul Bum | ko |
dc.contributor.author | Woo, Doo Hyung | ko |
dc.contributor.author | Kim, Byung Hyuk | ko |
dc.contributor.author | Lee, Hee Chul | ko |
dc.date.accessioned | 2013-03-12T02:22:28Z | - |
dc.date.available | 2013-03-12T02:22:28Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2011-07 | - |
dc.identifier.citation | IEICE TRANSACTIONS ON ELECTRONICS, v.E94C, no.7, pp.1212 - 1219 | - |
dc.identifier.issn | 0916-8524 | - |
dc.identifier.uri | http://hdl.handle.net/10203/101077 | - |
dc.description.abstract | This paper presents a novel charge transfer CMOS readout circuit for an X-ray time delay and integration (TDI) array with a depth of 64. In this study, a charge transfer readout scheme based on CMOS technology is proposed to sum 64 stages of the TDI signal. In addition, a dead pixel elimination circuit is integrated within a chip, thus resolving the weakness of TDI arrays related to defective pixels. The proposed method is a novel CMOS solution for large depth TDI arrays. Thus, a high signal-to-noise ratio (SNR) can be acquired due to the increased TDI depth. The readout chip was fabricated with a 0.6 mu m standard CMOS process for a 150 x 64 CdTe X-ray detector array. The readout circuit was found to effectively increase the charge storage capacity up to 1.6 x 10(8) electrons, providing an improved SNR by a factor of approximately 8. The measured equivalent noise charge resulting from the readout circuit was 1.68 x 10(4) electrons, a negligible value compared to the shot noise from the detector. | - |
dc.language | English | - |
dc.publisher | IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG | - |
dc.title | Design of a Smart CMOS Readout Circuit for Panoramic X-Ray Time Delay and Integration Arrays | - |
dc.type | Article | - |
dc.identifier.wosid | 000292619000012 | - |
dc.identifier.scopusid | 2-s2.0-79960005197 | - |
dc.type.rims | ART | - |
dc.citation.volume | E94C | - |
dc.citation.issue | 7 | - |
dc.citation.beginningpage | 1212 | - |
dc.citation.endingpage | 1219 | - |
dc.citation.publicationname | IEICE TRANSACTIONS ON ELECTRONICS | - |
dc.contributor.localauthor | Lee, Hee Chul | - |
dc.contributor.nonIdAuthor | Kim, Chul Bum | - |
dc.contributor.nonIdAuthor | Woo, Doo Hyung | - |
dc.contributor.nonIdAuthor | Kim, Byung Hyuk | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | X-ray | - |
dc.subject.keywordAuthor | readout circuit | - |
dc.subject.keywordAuthor | time delay and integration (TDI) | - |
dc.subject.keywordAuthor | dead pixel elimination (DPE) | - |
dc.subject.keywordAuthor | charge transfer | - |
dc.subject.keywordPlus | DIGITAL MAMMOGRAPHY | - |
dc.subject.keywordPlus | DETECTOR | - |
dc.subject.keywordPlus | RADIOGRAPHY | - |
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