Design of a Smart CMOS Readout Circuit for Panoramic X-Ray Time Delay and Integration Arrays

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dc.contributor.authorKim, Chul Bumko
dc.contributor.authorWoo, Doo Hyungko
dc.contributor.authorKim, Byung Hyukko
dc.contributor.authorLee, Hee Chulko
dc.date.accessioned2013-03-12T02:22:28Z-
dc.date.available2013-03-12T02:22:28Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2011-07-
dc.identifier.citationIEICE TRANSACTIONS ON ELECTRONICS, v.E94C, no.7, pp.1212 - 1219-
dc.identifier.issn0916-8524-
dc.identifier.urihttp://hdl.handle.net/10203/101077-
dc.description.abstractThis paper presents a novel charge transfer CMOS readout circuit for an X-ray time delay and integration (TDI) array with a depth of 64. In this study, a charge transfer readout scheme based on CMOS technology is proposed to sum 64 stages of the TDI signal. In addition, a dead pixel elimination circuit is integrated within a chip, thus resolving the weakness of TDI arrays related to defective pixels. The proposed method is a novel CMOS solution for large depth TDI arrays. Thus, a high signal-to-noise ratio (SNR) can be acquired due to the increased TDI depth. The readout chip was fabricated with a 0.6 mu m standard CMOS process for a 150 x 64 CdTe X-ray detector array. The readout circuit was found to effectively increase the charge storage capacity up to 1.6 x 10(8) electrons, providing an improved SNR by a factor of approximately 8. The measured equivalent noise charge resulting from the readout circuit was 1.68 x 10(4) electrons, a negligible value compared to the shot noise from the detector.-
dc.languageEnglish-
dc.publisherIEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG-
dc.subjectDIGITAL MAMMOGRAPHY-
dc.subjectDETECTOR-
dc.subjectRADIOGRAPHY-
dc.titleDesign of a Smart CMOS Readout Circuit for Panoramic X-Ray Time Delay and Integration Arrays-
dc.typeArticle-
dc.identifier.wosid000292619000012-
dc.identifier.scopusid2-s2.0-79960005197-
dc.type.rimsART-
dc.citation.volumeE94C-
dc.citation.issue7-
dc.citation.beginningpage1212-
dc.citation.endingpage1219-
dc.citation.publicationnameIEICE TRANSACTIONS ON ELECTRONICS-
dc.contributor.localauthorLee, Hee Chul-
dc.contributor.nonIdAuthorKim, Chul Bum-
dc.contributor.nonIdAuthorWoo, Doo Hyung-
dc.contributor.nonIdAuthorKim, Byung Hyuk-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorX-ray-
dc.subject.keywordAuthorreadout circuit-
dc.subject.keywordAuthortime delay and integration (TDI)-
dc.subject.keywordAuthordead pixel elimination (DPE)-
dc.subject.keywordAuthorcharge transfer-
dc.subject.keywordPlusDIGITAL MAMMOGRAPHY-
dc.subject.keywordPlusDETECTOR-
dc.subject.keywordPlusRADIOGRAPHY-
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