Analysis on switching mechanism of graphene oxide resistive memory device

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Recently, a flexible resistive switching memory device using graphene oxide was successfully demonstrated. In this work, the new findings on the switching mechanism of the graphene oxide memory are presented through a comprehensive study on the switching phenomena. It has been found that the switching operation of graphene oxide resistive switching memory (RRAM) is governed by dual mechanism of oxygen migration and Al diffusion. However, the Al diffusion into the graphene oxide is the main factor to determine the switching endurance property which limits the long term lifetime of the device. The electrode dependence on graphene oxide RRAM operation has been analyzed as well and is attributed to the difference in surface roughness of graphene oxide for the different bottom electrodes. (C) 2011 American Institute of Physics. [doi:10.1063/1.3624947]
Publisher
AMER INST PHYSICS
Issue Date
2011-08
Language
English
Article Type
Article
Keywords

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Citation

JOURNAL OF APPLIED PHYSICS, v.110, no.4

ISSN
0021-8979
DOI
10.1063/1.3624947
URI
http://hdl.handle.net/10203/101068
Appears in Collection
MS-Journal Papers(저널논문)EE-Journal Papers(저널논문)
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