Transformable Functional Nanoscale Building Blocks with Wafer-Scale Silicon Nanowires

Cited 13 time in webofscience Cited 0 time in scopus
  • Hit : 475
  • Download : 60
Through the fusion of electrostatics. and mechanical dynamics, we demonstrate a transformable silicon nanowire, (SiNW) field effect transistor (FET) through a Wafer-scale top-down approach. By felicitously taking advantage of the proposed electrostatic SiNW-FET with mechanically movable SiNWs, all essential logic gates, including address decoders, can be monolithically integrated into a single device. The unification of various functional devices, such as pn-diodes, FETs, logic gates, and address decoders, can therefore eliminate the complex fabrication issues associated with nanoscale integration. These results represent a step toward the creation of multifunctional and flexible nanoelectronics.
Publisher
AMER CHEMICAL SOC
Issue Date
2011-02
Language
English
Article Type
Article
Keywords

LOGIC GATES; DEVICES; ELECTRONICS; NANOTUBES; WIRES

Citation

NANO LETTERS, v.11, no.2, pp.854 - 859

ISSN
1530-6984
DOI
10.1021/nl104212e
URI
http://hdl.handle.net/10203/100867
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 13 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0