Detection of a Nanoscale Hot Spot by Hot Carriers in a Poly-Si TFT Using Polydiacetylene-Based Thermoresponsive Fluorometry

Cited 2 time in webofscience Cited 0 time in scopus
  • Hit : 288
  • Download : 35
The thermal distribution of polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) with sizes close to the nanoregime is analyzed by means of a fluorescent nanothermographic imaging technique based on the heat-induced fluorescence feature of polydiacetylene (PDA) supramolecules. The direct detection of nanoscale hot spots generated by hot carriers in poly-Si TFTs is demonstrated with sufficient spatial resolution. The thermal information of poly-Si TFTs under operation is recorded in a PDA-embedded polyvinyl alcohol film in the fluorescence state. The proposed thermal analysis method for poly-Si TFTs overcomes the fundamental spatial resolution limitation of conventional infrared detection systems and guarantees nanoscale spatial resolution. This approach, which offers cost effectiveness, nontoxicity, and simplicity of calibration steps, can be useful for further analysis of the degradation mechanism and reliability issues of submicrometer poly-Si TFTs.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2011-05
Language
English
Article Type
Article
Keywords

THIN-FILM TRANSISTORS; SPATIAL-RESOLUTION; RELIABILITY; DEGRADATION; MICROSCOPY; DEVICES

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.5, pp.1570 - 1574

ISSN
0018-9383
URI
http://hdl.handle.net/10203/100854
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 2 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0