DC Field | Value | Language |
---|---|---|
dc.contributor.author | Han, Jin-Woo | ko |
dc.contributor.author | Ryu, Seong-Wan | ko |
dc.contributor.author | Kim, Chung-Jin | ko |
dc.contributor.author | Choi, Sung-Jin | ko |
dc.contributor.author | Kim, Sung-Ho | ko |
dc.contributor.author | Ahn, Jae-Hyuk | ko |
dc.contributor.author | Kim, Dong-Hyun | ko |
dc.contributor.author | Choi, Kyu-Jin | ko |
dc.contributor.author | Cho, Byung-Jin | ko |
dc.contributor.author | Kim, Jin-Soo | ko |
dc.contributor.author | Kim, Kwang-Hee | ko |
dc.contributor.author | Lee, Gi-Sung | ko |
dc.contributor.author | Oh, Jae-Sub | ko |
dc.contributor.author | Song, Myeong-Ho | ko |
dc.contributor.author | Park, Yuri-Chang | ko |
dc.contributor.author | Kim, Jeoung-Woo | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2013-03-12T00:20:24Z | - |
dc.date.available | 2013-03-12T00:20:24Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-04 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.4, pp.641 - 647 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/100810 | - |
dc.description.abstract | A band-offset-based unified-RAM (URAM) cell fabricated on a Si/Si1-yCy substrate is presented for the fusion of a nonvolatile memory (NVM) and a capacitorless 1T-DRAM. An oxide/nitride/oxide (O/N/O) gate dielectric and a floating-body are combined in a FinFET structure to perform URAM operation in a single transistor. The O/N/O layer is utilized as a charge trap layer for NVM, and the floating-body is used as an excess hole storage node for capacitorless 1T-DRAM. The introduction of a pseudomorphic SiC-based heteroepitaxial layer into the Si substrate provides band offset in a valence band. The FinFET fabricated on the energy-band-engineered Si1-yCy substrate allows hole accumulation in the channel for 1T-DRAM. The band-engineered URAM yields a cost-effective process that is compatible with a conventional body-tied FinFET SONOS. The fabricated URAM shows highly reliable NVM and high-speed 1T-DRAM operations in a single memory cell. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | QUANTUM-WELL STRUCTURES | - |
dc.subject | PHOTOLUMINESCENCE | - |
dc.subject | OFFSETS | - |
dc.subject | DRAM | - |
dc.subject | NVM | - |
dc.title | Energy-Band-Engineered Unified-RAM (URAM) Cell on Buried Si1-yCy Substrate for Multifunctioning Flash Memory and 1T-DRAM | - |
dc.type | Article | - |
dc.identifier.wosid | 000265090100014 | - |
dc.identifier.scopusid | 2-s2.0-67349160459 | - |
dc.type.rims | ART | - |
dc.citation.volume | 56 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 641 | - |
dc.citation.endingpage | 647 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2009.2014197 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Cho, Byung-Jin | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Han, Jin-Woo | - |
dc.contributor.nonIdAuthor | Ryu, Seong-Wan | - |
dc.contributor.nonIdAuthor | Kim, Chung-Jin | - |
dc.contributor.nonIdAuthor | Kim, Sung-Ho | - |
dc.contributor.nonIdAuthor | Kim, Dong-Hyun | - |
dc.contributor.nonIdAuthor | Choi, Kyu-Jin | - |
dc.contributor.nonIdAuthor | Kim, Jin-Soo | - |
dc.contributor.nonIdAuthor | Kim, Kwang-Hee | - |
dc.contributor.nonIdAuthor | Lee, Gi-Sung | - |
dc.contributor.nonIdAuthor | Oh, Jae-Sub | - |
dc.contributor.nonIdAuthor | Song, Myeong-Ho | - |
dc.contributor.nonIdAuthor | Park, Yuri-Chang | - |
dc.contributor.nonIdAuthor | Kim, Jeoung-Woo | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Band offset | - |
dc.subject.keywordAuthor | body-tied FinFET | - |
dc.subject.keywordAuthor | capacitorless 1T-DRAM | - |
dc.subject.keywordAuthor | nonvolatile memory (NVM) | - |
dc.subject.keywordAuthor | SiC | - |
dc.subject.keywordAuthor | SONOS | - |
dc.subject.keywordAuthor | unified-RAM (URAM) | - |
dc.subject.keywordPlus | QUANTUM-WELL STRUCTURES | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | OFFSETS | - |
dc.subject.keywordPlus | DRAM | - |
dc.subject.keywordPlus | NVM | - |
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