Effect of channel orientation in p-type nanowire Schottky barrier metal-oxide-semiconductor field-effect transistors

Cited 5 time in webofscience Cited 0 time in scopus
  • Hit : 191
  • Download : 0
Device performance of p-type nanowire Schotty barrier metal-oxide-semiconductor field-effect transistors is investigated focusing on the channel orientation effects. A rigorous quantum-mechanical calculation of hole current based on the multiband k.p method is carried out. The [111] oriented devices show the most superior performance, in terms of subthreshold slope, threshold voltage variation, and on-current. In particular, on-current in the [111] oriented devices is about twice as large as that in the [100] oriented devices. Tunneling effective mass, quantization energy, and Schottky barrier thickness are examined as the major factors that influence on the orientation-dependent current injection into the channel. (C) 2010 American Institute of Physics. [doi:10.1063/1.3485062]
Publisher
AMER INST PHYSICS
Issue Date
2010-08
Language
English
Article Type
Article
Keywords

PERFORMANCE; MOSFETS; BODY; GATE

Citation

APPLIED PHYSICS LETTERS, v.97, no.9, pp.092108

ISSN
0003-6951
DOI
10.1063/1.3485062
URI
http://hdl.handle.net/10203/100373
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 5 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0