Hole-Effective Masses in the Transport Calculation of Si Nanowire pMOSFETs

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The full-quantum, self-consistent simulation of p-type silicon nanowire field effect transistors based on the k . p method is performed and their device characteristics are examined in the light of the hole-effective masses. An attempt is made in this study to assess the role of the hole-effective masses by devising simple, single-band parabolic effective mass (PEM) Hamiltonians and comparing the transport characteristics with the ones from the k . p method. It is found that the PEM Hamiltonian with isotropic effective masses fails to correctly produce both the scaling behavior of the subthreshold currents and the behavior of the on-currents with respect to the silicon orientation. A modified PEM model with light-hole effective mass in the transport direction and quantization effective mass in the perpendicular direction greatly improve the subthreshold behavior for all the silicon orientations, which shows that the top-most light-hole subband dominantly determines the subthreshold behavior. The modified PEM model however overestimates the on-currents, indicating the limitation of the model.
Publisher
AMER SCIENTIFIC PUBLISHERS
Issue Date
2011-01
Language
English
Article Type
Article
Keywords

SILICON

Citation

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.1, pp.322 - 325

ISSN
1533-4880
DOI
10.1166/jnn.2011.3168
URI
http://hdl.handle.net/10203/100368
Appears in Collection
EE-Journal Papers(저널논문)
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