Showing results 11561 to 11580 of 99879
Anisotropy of magnetoresistance of cylindrically textured YBCO film on YSZ cylinder Oh, S; Goo, D; Youm, Do-Jun, PHYSICA C, v.282, pp.2337 - 2338, 1997 |
Anisotropy, Itineracy, and Magnetic Frustration in High-T-C Iron Pnictides Han, Myung Joon; Yin, Quan; Pickett, Warren E.; Savrasov, Sergey Y., PHYSICAL REVIEW LETTERS, v.102, no.10, 2009-03 |
Ankle dorsiflexion assistance of patients with foot drop using a powered ankle-foot orthosis to improve the gait asymmetry Shin, Wonseok; Nam, Dongwoo; Ahn, Bummo; Kim, Sangjoon J.; Lee, Dong Yeon; Kwon, Suncheol; Kim, Jung, JOURNAL OF NEUROENGINEERING AND REHABILITATION, v.20, no.1, 2023-10 |
ANKRD9 is associated with tumor suppression as a substrate receptor subunit of ubiquitin ligase Lee, Yejin; Lim, Byungho; Lee, Seon Woo; Lee, Woo Rin; Kim, Yong-In; Kim, Minhyeok; Ju, Hyoungseok; et al, BIOCHIMICA ET BIOPHYSICA ACTA-MOLECULAR BASIS OF DISEASE, v.1864, no.10, pp.3145 - 3153, 2018-07 |
Anneal temperature dependent Er3+/Tm3+ energy transfer and luminescence from Er and Tm co-doped silicon-rich silicon oxide Seo, Se-Young; Kim, Kyung Joong; Shin, JungHoon, THIN SOLID FILMS, v.518, no.23, pp.7012 - 7015, 2010-09 |
Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor deposition Chen, XY; Lu, YF; Tang, LJ; Wu, YH; Cho, Byung Jin; Xu, XJ; Dong, JR; et al, JOURNAL OF APPLIED PHYSICS, v.97, no.1, 2005-01 |
Annealing behavior of gate oxide leakage current after quasi-breakdown Xu, Z; Cho, Byung Jin; Li, MF, MICROELECTRONICS RELIABILITY, v.40, pp.1341 - 1346, 2000-10 |
Annealing behavior of hydrogen-plasma-induced n-type HgCdTe Yang, KD; Lee, YS; Lee, Hee Chul, APPLIED PHYSICS LETTERS, v.87, pp.370 - 381, 2005-09 |
ANNEALING BEHAVIOR OF METASTABLE DEFECTS CREATED BY BIAS STRESS IN HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS LEE, JY; Lee, Choochon; JANG, J; BAE, BS, SOLID STATE COMMUNICATIONS, v.83, no.10, pp.833 - 835, 1992-09 |
Annealing effect on dielectric and leakage current characteristics of Mn-doped Ba0.6Sr0.4TiO3 thin films as gate insulators for low voltage ZnO thin film transistor Kang, KyongTae; Kim, Il-Doo; Lim, Mi-Hwa; Kim, Ho Gi; Hong, Jae-Min, THIN SOLID FILMS, v.516, no.6, pp.1218 - 1222, 2008-01 |
Annealing effect on the electrochemical property of polyaniline complexed with various acids S. Kim; Chung, In Jae, SYNTHETIC METALS, v.97, no.2, pp.127 - 133, 1998-09 |
ANNEALING EFFECTS IN HYDROGENATED SILICON-NITRIDE FILMS DURING HIGH-ENERGY ION-BEAM IRRADIATION Lee, Joong-Whan; Lee, Sang-Hwan; Yoo, Hyung Joun; Jhon, Mu-Shik; Ryoo, Ryong, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.142, no.9, pp.3210 - 3214, 1995-09 |
Annealing effects of Co-Cr-Pt-SiO2 perpendicular magnetic recording media Park, S. H.; Kim, S. O.; Oh, H. S.; Kim, Y. S.; Hong, D. H.; Lee, Taek Dong, IEEE TRANSACTIONS ON MAGNETICS, v.42, no.10, pp.2390 - 2392, 2006-10 |
Annealing Effects on Electron Drift Mobility in Hydrogenated Amorphous Silicon Choochon Lee, JOURNAL OF APPLIED PHYSICS, v.57, no.10, pp.4808 - 4810, 1985 |
Annealing Effects on Phase Transition of a Thermotropic Liquid Crystalline Copolyesteramide Y.C. Kim; Chung, In Jae, POLYMER JOURNAL, v.25, no.12, pp.1257 - 1265, 1993 |
Annealing effects on the microstructural properties of the ZnO thin films grown on p-InP (100) substrates Yuk, Jong Min; Son, DI; Kim, TW; Kim, JY; Choi, WK, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.1, pp.357 - 360, 2008-07 |
ANNEALING KINETICS IN AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS B.S. Bae; Choochon Lee, PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, v.65, no.5, pp.933 - 944, 1992 |
Annealing of Fowler-Nordheim stress-induced leakage currents in thin silicon dioxide films Ang, CH; Ling, CH; Cheng, ZY; Kim, SJ; Cho, Byung Jin, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.147, no.12, pp.4676 - 4682, 2000-12 |
Annealing of RuO2 and Ru bottom electrodes and its effects on the electrical properties of (Ba,Sr)TiO3 thin films Kim, Ho Gi, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.37, no.1, pp.284 - 289, 1998 |
Annealing temperature effect of PbZr0.4Ti0.6O3 film on La1/2Sr1/2CoO3 bottom electrode Kim, JH; Koh, KS; Choo, Woong Kil, MATERIALS SCIENCE FORUM, v.449-4, pp.957 - 960, 2004 |
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