Browse by Type Article

Showing results 11561 to 11580 of 99879

11561
Anisotropy of magnetoresistance of cylindrically textured YBCO film on YSZ cylinder

Oh, S; Goo, D; Youm, Do-Jun, PHYSICA C, v.282, pp.2337 - 2338, 1997

11562
Anisotropy, Itineracy, and Magnetic Frustration in High-T-C Iron Pnictides

Han, Myung Joon; Yin, Quan; Pickett, Warren E.; Savrasov, Sergey Y., PHYSICAL REVIEW LETTERS, v.102, no.10, 2009-03

11563
Ankle dorsiflexion assistance of patients with foot drop using a powered ankle-foot orthosis to improve the gait asymmetry

Shin, Wonseok; Nam, Dongwoo; Ahn, Bummo; Kim, Sangjoon J.; Lee, Dong Yeon; Kwon, Suncheol; Kim, Jung, JOURNAL OF NEUROENGINEERING AND REHABILITATION, v.20, no.1, 2023-10

11564
ANKRD9 is associated with tumor suppression as a substrate receptor subunit of ubiquitin ligase

Lee, Yejin; Lim, Byungho; Lee, Seon Woo; Lee, Woo Rin; Kim, Yong-In; Kim, Minhyeok; Ju, Hyoungseok; et al, BIOCHIMICA ET BIOPHYSICA ACTA-MOLECULAR BASIS OF DISEASE, v.1864, no.10, pp.3145 - 3153, 2018-07

11565
Anneal temperature dependent Er3+/Tm3+ energy transfer and luminescence from Er and Tm co-doped silicon-rich silicon oxide

Seo, Se-Young; Kim, Kyung Joong; Shin, JungHoon, THIN SOLID FILMS, v.518, no.23, pp.7012 - 7015, 2010-09

11566
Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor deposition

Chen, XY; Lu, YF; Tang, LJ; Wu, YH; Cho, Byung Jin; Xu, XJ; Dong, JR; et al, JOURNAL OF APPLIED PHYSICS, v.97, no.1, 2005-01

11567
Annealing behavior of gate oxide leakage current after quasi-breakdown

Xu, Z; Cho, Byung Jin; Li, MF, MICROELECTRONICS RELIABILITY, v.40, pp.1341 - 1346, 2000-10

11568
Annealing behavior of hydrogen-plasma-induced n-type HgCdTe

Yang, KD; Lee, YS; Lee, Hee Chul, APPLIED PHYSICS LETTERS, v.87, pp.370 - 381, 2005-09

11569
ANNEALING BEHAVIOR OF METASTABLE DEFECTS CREATED BY BIAS STRESS IN HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS

LEE, JY; Lee, Choochon; JANG, J; BAE, BS, SOLID STATE COMMUNICATIONS, v.83, no.10, pp.833 - 835, 1992-09

11570
Annealing effect on dielectric and leakage current characteristics of Mn-doped Ba0.6Sr0.4TiO3 thin films as gate insulators for low voltage ZnO thin film transistor

Kang, KyongTae; Kim, Il-Doo; Lim, Mi-Hwa; Kim, Ho Gi; Hong, Jae-Min, THIN SOLID FILMS, v.516, no.6, pp.1218 - 1222, 2008-01

11571
Annealing effect on the electrochemical property of polyaniline complexed with various acids

S. Kim; Chung, In Jae, SYNTHETIC METALS, v.97, no.2, pp.127 - 133, 1998-09

11572
ANNEALING EFFECTS IN HYDROGENATED SILICON-NITRIDE FILMS DURING HIGH-ENERGY ION-BEAM IRRADIATION

Lee, Joong-Whan; Lee, Sang-Hwan; Yoo, Hyung Joun; Jhon, Mu-Shik; Ryoo, Ryong, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.142, no.9, pp.3210 - 3214, 1995-09

11573
Annealing effects of Co-Cr-Pt-SiO2 perpendicular magnetic recording media

Park, S. H.; Kim, S. O.; Oh, H. S.; Kim, Y. S.; Hong, D. H.; Lee, Taek Dong, IEEE TRANSACTIONS ON MAGNETICS, v.42, no.10, pp.2390 - 2392, 2006-10

11574
Annealing Effects on Electron Drift Mobility in Hydrogenated Amorphous Silicon

Choochon Lee, JOURNAL OF APPLIED PHYSICS, v.57, no.10, pp.4808 - 4810, 1985

11575
Annealing Effects on Phase Transition of a Thermotropic Liquid Crystalline Copolyesteramide

Y.C. Kim; Chung, In Jae, POLYMER JOURNAL, v.25, no.12, pp.1257 - 1265, 1993

11576
Annealing effects on the microstructural properties of the ZnO thin films grown on p-InP (100) substrates

Yuk, Jong Min; Son, DI; Kim, TW; Kim, JY; Choi, WK, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.1, pp.357 - 360, 2008-07

11577
ANNEALING KINETICS IN AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS

B.S. Bae; Choochon Lee, PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, v.65, no.5, pp.933 - 944, 1992

11578
Annealing of Fowler-Nordheim stress-induced leakage currents in thin silicon dioxide films

Ang, CH; Ling, CH; Cheng, ZY; Kim, SJ; Cho, Byung Jin, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.147, no.12, pp.4676 - 4682, 2000-12

11579
Annealing of RuO2 and Ru bottom electrodes and its effects on the electrical properties of (Ba,Sr)TiO3 thin films

Kim, Ho Gi, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.37, no.1, pp.284 - 289, 1998

11580
Annealing temperature effect of PbZr0.4Ti0.6O3 film on La1/2Sr1/2CoO3 bottom electrode

Kim, JH; Koh, KS; Choo, Woong Kil, MATERIALS SCIENCE FORUM, v.449-4, pp.957 - 960, 2004

rss_1.0 rss_2.0 atom_1.0