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Showing results 91901 to 91920 of 279471

91901
Ferroelectric Properties of Bi(4-x)Ce(x)Ti(3)O(12) Thin films and quantitative structure-spontaneous polarization relationship

Woo, Seong-Ihl, 2006 MRS spring meeting, MRS, 2006-04-17

91902
Ferroelectric properties of Bi3.25Ce0.75Ti3O12 thin films prepared by a liquid source misted chemical deposition

Jeon, MK; Chung, HJ; Kim, KW; Oh, KS; Woo, Seong-Ihl, THIN SOLID FILMS, v.489, no.1-2, pp.1 - 4, 2005-10

91903
Ferroelectric properties of heteroepitaxial PbTiO3 and PbZr1-xTixO3 films on Nb-doped SrTiO3 fabricated by hydrothermal epitaxy below Curie temperature

Han, SH; Ahn, WS; Lee, HC; Choi, Si-Kyung, JOURNAL OF MATERIALS RESEARCH, v.22, no.4, pp.1037 - 1042, 2007-04

91904
Ferroelectric properties of lead-free (Bi,La)(4)Ti3O12 thin film deposited on MTP cell structure for high density FeRAM device

Cho, KW; Kim, NK; Oh, SH; Choi, ES; Sun, HJ; Yeom, SJ; Lee, KN; et al, ECO-MATERIALS PROCESSING DESIGN VI BOOK SERIES: MATERIALS SCIENCE FORUM, v.486-487, pp.285 - 288, 2005

91905
Ferroelectric properties of PZT films on LaNiO3 bottom electrode deposited under different oxygen partial pressure

Kim, H; Kim, JH; Choo, Woong Kil, JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, v.25, no.12, pp.2253 - 2256, 2005

91906
Ferroelectric properties of sol-gel derived Pb(Zr,Ti)O3 capacitors grown on IrO2 electrode

Yi I.; Kim D.; Kim S.; Lee Y.; Kim C.; Chung I., 13th International Symposium on Integrated Ferroelectrics, v.37, no.40547, pp.135 - 144, 2001-03-11

91907
Ferroelectric properties of ultra-thin epitaxial Pb(Zr0.2Ti0.8)O-3 thin films grown on SrRuO3/SrTiO3 substrates

Lee, WS; Ahn, KC; Yoon, SG; Shin, HJ; Kim, YS; No, Kwangsoo, INTEGRATED FERROELECTRICS, v.73, pp.125 - 132, 2005

91908
Ferroelectric size effects in multiferroic BiFeO3 thin films

Chu, Y. H.; Zhao, T.; Cruz, M. P.; Zhan, Q.; Yang, P. L.; Martin, L. W.; Huijben, M.; et al, APPLIED PHYSICS LETTERS, v.90, no.25, 2007-06

91909
Ferroelectric SrMnO3 Thin Film Grown on (110)-Oriented PMN-PT Substrate

Park, Seong Min; Kim, Jaegyu; Anoop, Gopinathan; Seol, WooJun; Lee, Su Yong; Joh, Hyunjin; Kim, Tae Yeon; et al, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.18, no.8, 2024-08

91910
Ferroelectric Thin Ffilms Prepared by RF Magnetron Sputtering Process

No, Kwangsoo; Park, Myung Sik; Koo, Il Woong; Cho, Sang Hee; Chung, Su Tae, Proceeding of the Third IUMRS international Conference, E3-P01, pp.149 - 152, IUMRS, 1995-01-01

91911
Ferroelectric thin film device and method of manufacturing the same

Shin, Sung-Chul; Kim, Sang-Hyun, 2011-02-15

91912
Ferroelectric Thin Film of VDF/TrFE Copolymer using Spin Coating method

Lee, Hee Chul, International Conference on Organic Electronics, 2007-06-01

91913
Ferroelectric Thin films Prepared by RF Magnetron Sputtering Process

No, Kwangsoo, IVMRS, 1995

91914
Ferroelectric thin films with nano-grain structure for terabit storage devices

S. Buehlmann; HONG, DANIEL SEUNGBUM; Y. K. Kim; Y.-W. Nam; A. Tikhonovsky; K. Kim; Y. Kim; et al, Samsung Journal of Innovative Technology, Samsung, 2007-08

91915
Ferroelectric thin films: Review of materials, properties, and applications

Setter, N.; Damjanovic, D.; Eng, L.; Fox, G.; Gevorgian, S.; Hong, S.; Kingon, A.; et al, JOURNAL OF APPLIED PHYSICS, v.100, no.5, 2006-09

91916
Ferroelectric thin-film-based electrically tunable bandpass filters

Kim, Il-Doo; Lim, MH; Kim, Ho Gi; Kim, KB; Yun, TS, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.5, no.11, pp.25 - 28, 2002-11

91917
Ferroelectric-Polymer-Enabled Contactless Electric Power Generation in Triboelectric Nanogenerators

Kim, Hyun Soo; Kim, Dong Yeong; Kim, Jae-Eun; Kim, Jong Hun; Kong, Dae Sol; Murillo, Gonzalo; Lee, Gwan-Hyoung; et al, ADVANCED FUNCTIONAL MATERIALS, v.29, no.45, pp.1905816, 2019-11

91918
Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Based Tri-Layer Capacitors at Low-Temperature (350 degrees C) Annealing Process

Gaddam, Venkateswarlu; Das, Dipjyoti; Jung, Taeseung; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.42, no.6, pp.812 - 815, 2021-06

91919
Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Capacitors by Incorporating Ta2O5 Dielectric Seed Layers

Gaddam, Venkateswarlu; Das, Dipjyoti; Jeon, Sanghun, IEEE Electron Devices Technology and Manufacturing Conference (EDTM), IEEE, 2020-03

91920
Ferroelectricity in Al2O3/Hf0.5Zr0.5O2 Bilayer Stack: Role of Dielectric Layer Thickness and Annealing Temperature

Das, Dipjyoti; Gaddam, Venkateswarlu; Jeon, Sanghun, JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.21, no.1, pp.62 - 67, 2021-02

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