Browse by Subject s function

Showing results 4 to 14 of 14

4
Carbon nanotube, graphene, nanowire, and molecule-based electron and spin transport phenomena using the nonequilibrium Greens function method at the level of first principles theory

Kim, Woo Youn; Kim, KS, JOURNAL OF COMPUTATIONAL CHEMISTRY, v.29, no.7, pp.1073 - 1083, 2008-05

5
Complete Nevanlinna counting functions of boundary-preserving Nevanlinna functions

Ahern, Patrick; Kim, Hong-Oh, COMPLEX VARIABLES AND ELLIPTIC EQUATIONS, v.60, no.1, pp.118 - 133, 2015-01

6
Computational Study on the Performance of Si Nanowire pMOSFETs Based on the k . p Method

Shin, Mincheol; Lee, S; Klimeck, G, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.9, pp.2274 - 2283, 2010-09

7
Efficient Atomistic Simulation of Heterostucture Field-Effect Transistors

Ahn, Yongsoo; Shin, Mincheol, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.7, no.1, pp.668 - 676, 2019-08

8
Efficient device simulations using density functional theory Hamiltonian and non-equilibrium Green's function: heterostructure mode space method and core charge approximation

Jeon, Seonghyeok; Shin, Mincheol, JOURNAL OF COMPUTATIONAL ELECTRONICS, v.22, no.5, pp.1167 - 1180, 2023-10

9
First-principles approach to the electron transport and applications for devices based on carbon nanotubes and ultrathin oxides

Kang, Yong-Ju; Kang, Joon Goo; Kim, Yong-Hoon; Chang, Kee-Joo, COMPUTER PHYSICS COMMUNICATIONS, v.177, pp.30 - 33, 2007-07

10
Non-equilibrium Greens function approach to three-dimensional carbon nanotube field effect transistor Simulations

Shin, Mincheol, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.52, no.4, pp.1287 - 1291, 2008-04

11
Performance Assessment of III-V Channel Ultra-Thin-Body Schottky-Barrier MOSFETs

Lee, Jaehyun; Shin, Mincheol, IEEE ELECTRON DEVICE LETTERS, v.35, no.7, pp.726 - 728, 2014-07

12
Quantum transport of holes in 1D, 2D, and 3D devices: the k center dot p method

Shin, Mincheol, JOURNAL OF COMPUTATIONAL ELECTRONICS, v.10, no.1-2, pp.44 - 50, 2011-06

13
Simulation Study of Germanium p-Type Nanowire Schottky Barrier MOSFETs

Lee, Jaehyun; Shin, Mincheol, IEEE ELECTRON DEVICE LETTERS, v.34, no.3, pp.342 - 344, 2013-03

14
Three-dimensional quantum simulation of multigate nanowire field effect transistors

Shin, Mincheol, MATHEMATICS AND COMPUTERS IN SIMULATION, v.79, no.4, pp.1060 - 1070, 2008-12

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