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The dependence of the exciton transition and the Fermi energy on the InyGa1-yAs well width in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs strained single quantum wells Kim, TW; Jung, M; Lee, DU; Kim, HJ; You, YS; Cho, JW; Yoo, KH; et al, JOURNAL OF MATERIALS SCIENCE LETTERS, v.19, no.9, pp.755 - 757, 2000-05 |
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