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Showing results 1 to 6 of 6

1
Application of Hexagonal Boron Nitride to a Heat-Transfer Medium of an InGaN/GaN Quantum-Well Green LED

Choi, Ilgyu; Lee, Kwanjae; Lee, Cheul-Ro; Lee, Joo Song; Kim, Soo Min; Jeong, Kwang-Un; Kim, Jin Soo, ACS APPLIED MATERIALS & INTERFACES, v.11, no.20, pp.18876 - 18884, 2019-05

2
Effects of implanted materials on impurity-induced layer disordering in strained Ga0.8In0.2As/GaxIn1-xAsyP1-y/Ga0.51In0.49P/GaAs quantum well structure

Jang, DH; Lee, JK; Park, KH; Cho, HS; Seong, TY; Park, Chul Soon; Pyun, KE, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.36, no.10B, pp.L1364 - L1366, 1997-10

3
High power operation of 980 nm GaInAs/GaInAsP/GaInP/GaAs pump lasers prepared by multi-step MOVPE growth with ion implanted channels

Park, Chul Soon, JAPANESE JOURNAL OF APPLIED PHYSICS, v.38, no.8, pp.4756 - 4763, 1999-08

4
Optical characteristics of highly-strained gaInNAs qauntum well = 변형이 큰 GaInNAs 양자우물의 광학적 특성 연구link

Kim, Chang-Kyu; 김창규; et al, 한국과학기술원, 2001

5
Passivation효과를 고려한 InP기반 HEMT의 공정 최적화 = Fabrication process optimization for InP-based HEMTs considering the passivation effectslink

김대희; Kim, Dae-Hee; et al, 한국과학기술원, 2003

6
Structural characterization of Ⅲ-nitride based alloys, heterostructures, and quantum wells = Ⅲ-N 질화물 반도체 이종접합구조와 양자우물구조의 구조적 특성link

Cho, Hyung-Koun; 조형균; et al, 한국과학기술원, 2002

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