Showing results 1 to 60 of 115
All-optical switching in InGaASP-InP photonic crystal resonator coupled with microfiber Hwang, IK; Kim, MK; Lee, Yong-Hee, IEEE PHOTONICS TECHNOLOGY LETTERS, v.19, pp.1535 - 1537, 2007-09 |
An electron microscopy study on the formation mechanism of hillocks on the (100)CdTe/GaAs Kim, YK; Lee, JeongYong; Kim, HS; Song, JH; Suh, SH, JOURNAL OF CRYSTAL GROWTH, v.192, no.1-2, pp.109 - 116, 1998-08 |
Angle-resolved photoemission of InSb(111)-2x2 Kim, JW; Kim, Sehun; Seo, JM; Tanaka, S; Kamada, M, JOURNAL OF PHYSICS-CONDENSED MATTER, v.8, no.23, pp.4189 - 4193, 1996-06 |
Atomic model for blue luminescences in Mg-doped GaN Lee, SG; Chang, Kee-Joo, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.14, no.2, pp.138 - 142, 1999-02 |
Atomic model for the donor compensation in Cl-doped ZnTe Lee, SG; Chang, Kee-Joo, PHYSICAL REVIEW B, v.57, no.11, pp.6239 - 6242, 1998-03 |
BUILT-IN BIAXIAL STRAIN DEPENDENCE OF GAMMA-X TRANSPORT IN GAAS/INXAL1-XAS/GAAS PSEUDOMORPHIC HETEROJUNCTION BARRIERS (X=0, 0.03, AND 0.06) Yang, Kyounghoon; EAST, JR; HADDAD, GI; DRUMMOND, TJ; BRENNAN, TM; HAMMONS, BE, JOURNAL OF APPLIED PHYSICS, v.76, no.12, pp.7907 - 7914, 1994-12 |
Comparison of the Pd/Ge/Au/Ni/Au and Pd/Ge/Pd/Ti/Au ohmic contacts to N-type InGaAs Park, SH; Lee, JM; Lee, TW; Park, MP; Park, Chul Soon; Kim, IH; Kim, JY, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.34, pp.427 - 431, 1999-06 |
COMPOSITIONAL DISORDERING IN AL0.3GA0.7AS/GAAS SUPERLATTICES BY THERMAL-TREATMENT KIM, SK; KANG, TW; HONG, CY; KIM, TW; Lee, JeongYong, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.143, no.1, pp.23 - 27, 1994-05 |
Concentrations of native and Mg-related defects in GaN Lee, SG; Chang, Kee-Joo, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.32, no.2, pp.188 - 191, 1998-02 |
Correlation between the ordered structure and the valence-band splitting in highly strained CdxZn1-xTe epilayers Kim, TW; Kwack, KD; Park, JG; Lee, HS; Lee, JeongYong; Jang, MS; Park, HL, APPLIED PHYSICS LETTERS, v.83, pp.269 - 271, 2003-07 |
Crystal structures of two variants for CuPtB-type ordering in strained CdxZn1-xTe epilayers Lee, HS; Lee, JeongYong; Kim, TW; Kwack, KD; Park, JG; Park, HL, SOLID STATE COMMUNICATIONS, v.127, pp.39 - 41, 2003-06 |
CuPt-type ordering and ordered domains in CdxZn1-xTe epilayers grown on ZnTe buffer layers Lee, HS; Lee, JeongYong; Choo, DC; Kim, TW; Park, HL, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.42, pp.S412 - S415, 2003-02 |
Dependence of the InAs size distribution on the growth times for vertically stacked InAs/GaAs quantum dots Lee, HS; Lee, JeongYong; Lee, DU; Choo, DC; Kim, TW; Kim, MD, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, pp.483 - 486, 2002-10 |
Dependence of the InAs size distribution on the stacked layer number for vertically stacked InAs/GaAs quantum dots Lee, HS; Lee, JeongYong; Kim, TW; Choo, DC; Kim, MD; Seo, SY; Shin, JungHoon, JOURNAL OF CRYSTAL GROWTH, v.241, no.1-2, pp.63 - 68, 2002-05 |
Dependence of the microstructural properties on the substrate temperature in strained CdTe (100)/GaAs (100) heterostructures Lee K.H.; Jung J.H.; Kim T.W.; Lee H.S.; Park H.L., APPLIED SURFACE SCIENCE, v.253, no.20, pp.8470 - 8473, 2007 |
DETERMINATION OF AL MOLE FRACTION FOR NULL CONDUCTION-BAND OFFSET IN IN0.5GA0.5P/ALXGA1-XAS HETEROJUNCTION BY PHOTOLUMINESCENCE MEASUREMENT Kim, Kwan‐Shik; Cho, Yong-Hoon; Choe, Byung‐Doo; Jeong, Weon Guk; H. Lim, APPLIED PHYSICS LETTERS, v.67, no.12, pp.1718 - 1720, 1995-09 |
Direct Observation of a Systematic Change of the Magnetic-Domain Structure With Temperature in 50-nm-MnAs/GaAs(001) Kim, JB; Lee, YP; Ryu, KS; Shin, Sung-Chul; Kim, KW; Rhee, JY; Akinaga, H, IEEE TRANSACTIONS ON MAGNETICS, v.44, pp.3241 - 3243, 2008-11 |
Effect of boron ion implantation on the structural and optical properties of polycrystalline Cd0.96Zn0.04Te thin films Sridharan, M; Narayandass, SK; Mangalaraj, D; Lee, Hee-Chul, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, v.201, no.3, pp.465 - 474, 2003-03 |
Effect of magnetic field on the magnetic domain structure of MnAs film on GaAs(001) Kim, JB; Lee, YP; Ryu, KS; Shin, Sung-Chul; Akinaga, H; Kim, KW, IEEE TRANSACTIONS ON MAGNETICS, v.42, pp.3249 - 3251, 2006-10 |
Effect of nonuniform continuum density of states on a Fano resonance in semiconductor quantum wells Lim, Jong-Seok; Lee, Woo-Ram; Sim, Heung-Sun; Averitt, R. D.; Zide, J. M. O.; Gossard, A. C.; Ahn, Jae-Wook, PHYSICAL REVIEW B, v.80, 2009-07 |
Effect of symmetric and asymmetric In0.2Ga0.8As wells on the structural and optical properties of InAs quantum dots grown by migration enhanced molecular beam epitaxy for the application to a 1.3 mu m laser diode Ryu, SP; Lee, YT; Cho, NK; Choi, WJ; Song, JD; Kwack, HS; Cho, Yong-Hoon, JOURNAL OF APPLIED PHYSICS, v.102, pp.561 - 569, 2007-07 |
Effect of thermal annealing on the microstructural and optical properties of vertically stacked InAs/GaAs quantum dots embedded in modulation-doped heterostructures Lee, HS; Lee, JeongYong; Kim, TW; Kim, MD, JOURNAL OF APPLIED PHYSICS, v.94, pp.6354 - 6357, 2003-11 |
Effect of two-step growth on the heteroepitaxial growth of InSb thin film on Si (001) substrate: A transmission electron microscopy study Kim, YH; Lee, JeongYong; Noh, YG; Kim, MD; Kwon, YJ; Oh, JE; Gronsky, R, APPLIED PHYSICS LETTERS, v.89, pp.A38 - A38, 2006-07 |
Effective potential calculation in a two-dimensional electron gas containing quasi one-dimensional AlAs submonolayer Kim, GH; Sim, Heung-Sun; Simmons, MY; Liang, CT; Ritchie, DA, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, pp.11 - 13, 2001-12 |
Effects of growth interruption on the evolution of InAs/InP self-assembled quantum dots Yoon, S; Moon, Y; Lee, TW; Hwang, H; Yoon, E; Kim, YD; Lee, UH; et al, JOURNAL OF ELECTRONIC MATERIALS, v.29, no.5, pp.535 - 541, 2000-05 |
Effects of growth temperature and surface treatment on growth orientation and interface structure during molecular beam epitaxy of CdTe on (0 0 1)GaAs Kwon, MS; Lee, JeongYong; Kim, MD; Kang, TW, JOURNAL OF CRYSTAL GROWTH, v.186, no.1-2, pp.79 - 84, 1998-03 |
Effects of implanted materials on impurity-induced layer disordering in strained Ga0.8In0.2As/GaxIn1-xAsyP1-y/Ga0.51In0.49P/GaAs quantum well structure Jang, DH; Lee, JK; Park, KH; Cho, HS; Seong, TY; Park, Chul Soon; Pyun, KE, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.36, no.10B, pp.L1364 - L1366, 1997-10 |
Effects of two-dimensional electron gas on the optical properties of InAs/GaAs quantum dots in modulation-doped heterostructures Kim, TW; Kim, JH; Lee, HS; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.86, pp.353 - 355, 2005-01 |
Electrical control of terahertz frequency conversion from time-varying surfaces Lee, Kanghee; Park, Jagang; Son, Jaehyeon; Kang, Bong Joo; Kim, Wontae; Lee, Seong Cheol; Min, Bumki; et al, OPTICS EXPRESS, v.27, no.9, pp.12762 - 12773, 2019-04 |
Electron-hole binding in a quantum-dot lattice: Excitonic oscillator strength Lyo S.K., PHYSICAL REVIEW B, v.72, no.4, 2005 |
Energetics and hydrogen passivation of carbon-related defects in InAs and In0.5Ga0.5As Lee, SG; Chang, Kee-Joo, PHYSICAL REVIEW B, v.53, no.15, pp.9784 - 9790, 1996-04 |
Exciton drag and drift induced by a two-dimensional electron gas Lyo, SK, PHYSICAL REVIEW B, v.71, pp.250 - 253, 2005-03 |
Existence and atomic arrangement of microtwins in CdTe epilayers grown on GaAs (211) B substrates Kim, TW; Lee, HS; Lee, JeongYong; Ryu, YS; Kang, TW, SOLID STATE COMMUNICATIONS, v.129, pp.515 - 518, 2004-02 |
Existence and atomic arrangement of microtwins in hexagonal MnAs ferromagnetic epilayers grown on GaAs (100) substrates with monolayer InAs Buffers Lee, HS; Yi, S; Kim, TW; Lee, DU; Jeon, HC; Kang, TW; Lee, KH; et al, APPLIED PHYSICS LETTERS, v.87, pp.985 - 992, 2005-08 |
Existence and atomic arrangement of the CuPt-type ordered structure near the ZnTe/GaAs heterointerface due to residual impurities Lee, HS; Lee, JeongYong; Kim, TW; Lee, DU; Choo, DC; Park, HL, JOURNAL OF APPLIED PHYSICS, v.90, no.8, pp.4027 - 4031, 2001-10 |
First-principles calculation of thermodynamic stability of acids and bases under pH environment: A microscopic pH theory Kim, Yong-Hyun; Kim, Kwiseon; Zhang, S. B., JOURNAL OF CHEMICAL PHYSICS, v.136, no.13, 2012-04 |
FIRST-PRINCIPLES CALCULATIONS OF THE PHONON-SPECTRUM IN SEMICONDUCTORS LEE, IH; CHEONG, BH; Chang, Kee-Joo, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.28, pp.267 - 272, 1995-05 |
Formation mechanisms of ZnO amorphous layers due to thermal treatment of ZnO thin films grown on p-InP (100) substrates Yuk, Jong Min; Lee, Jeong-Yong; No, Y. S.; Kim, T. W.; Choi, W. K., JOURNAL OF APPLIED PHYSICS, v.103, no.8, 2008-04 |
Formation of CuPt-type ordered (Cd, Zn)Te at CdTe/ZnTe interface Kwon, MS; Lee, JeongYong, JOURNAL OF CRYSTAL GROWTH, v.191, no.1-2, pp.51 - 58, 1998-07 |
Formation of GaP nanocones and micro-mesas by metal-assisted chemical etching Kim, Jaehoon; Oh, Jihun, PHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.18, no.5, pp.3402 - 3408, 2016-02 |
Growth and characterization of single-crystal GaN nanorods by hydride vapor phase epitaxy Kim, HM; Kim, DS; Kim, DY; Kang, TW; Cho, Yong-Hoon; Chung, KS, APPLIED PHYSICS LETTERS, v.81, no.12, pp.2193 - 2195, 2002-09 |
Growth mode and structural characterization of GaSb on Si (001) substrate: A transmission electron microscopy study Kim, YH; Lee, JeongYong; Noh, YG; Kim, MD; Cho, SM; Kwon, YJ; Oh, JE, APPLIED PHYSICS LETTERS, v.88, pp.380 - 388, 2006-06 |
Heat treatment effect on magnetic properties of polycrystalline Si1-xMnx semiconductors grown by MBE Kwon, D; Kim, HK; Kim, JH; Ihm, YE; Kim, D; Kim, H; Baek, JS; et al, JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.282, pp.240 - 243, 2004-05 |
HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY OF THE COGA/GAAS HETEROSTRUCTURE GROWN BY MOLECULAR-BEAM EPITAXY WOO, YD; KANG, TW; KIM, TW; Lee, JeongYong; KUO, TC; WANG, KL, SOLID STATE COMMUNICATIONS, v.91, no.3, pp.219 - 221, 1994-07 |
Improved efficiency of polymer solar cells by plasmonically enhanced photon recycling Cho, Seok Ho; Lee, Sung-Min; Choi, Kyung Cheol, SUSTAINABLE ENERGY & FUELS, v.3, no.10, pp.2597 - 2603, 2019-10 |
In-situ laser reflectometry method for wet-etch endpoint detection of VCSEL structure Cho, HK; Lee, JeongYong; Lee, B; Baek, JH; Han, WS, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.35, pp.1076 - 1079, 1999-12 |
InGaAs layer effect on the growth of AlGaAs/GaAs quantum wires on V-grooved InGaAs/GaAs substrates Lee, MS; Kim, EK; Kim, SI; Hwang, SM; Kim, CK; Min, SK; Lee, JeongYong, SOLID STATE COMMUNICATIONS, v.101, no.9, pp.705 - 708, 1997-03 |
InGaAsP microdisk lasers on AlxOy Song, DS; Hwang, JK; Kim, CK; Han, IY; Jang, DH; Lee, Yong-Hee, IEEE PHOTONICS TECHNOLOGY LETTERS, v.12, no.8, pp.954 - 956, 2000-08 |
Integration of PIN and Vertical Junction Field Effect Transistor for Photodetector Optoelectronic Integrated Circuit M.K.Gong; Kwon, Young Se, JAPANESE JOURNAL OF APPLIED PHYSICS, PART 1 : REGULAR PAPERS AND SHORT NOTES & REVIEW PAPERS, v.30, no.12B, pp.3893 - 3895, 1991-12 |
INTERFACIAL STAGES OF THE ZNTE/GAAS STRAINED HETEROSTRUCTURES GROWN BY TEMPERATURE-GRADIENT VAPOR TRANSPORT DEPOSITION AT LOW-TEMPERATURE KIM, TW; PARK, HL; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.64, no.19, pp.2526 - 2528, 1994-05 |
INVESTIGATION OF ELECTRICAL-PROPERTIES AND STABILITY OF SCHOTTKY CONTACTS ON (NH4)(2)S-X-TREATED N-TYPE AND P-TYPE IN0.5GA0.5P KWON, SD; KWON, HK; CHOE, BD; LIM, H; Lee, JeongYong, JOURNAL OF APPLIED PHYSICS, v.78, no.4, pp.2482 - 2488, 1995-08 |
Large two-beam coupling in the p-PMEH-PPV/DPP/DO3/C-60 Suh, DJ; Park, OOk; Ahn, T; Shim, Hong Ku, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.41, no.4A, pp.428 - 430, 2002-04 |
Local vibrational modes of H-2 and H-2* complexes in crystalline Si Kim, YS; Jin, YG; Jeong, JW; Chang, Kee-Joo, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.14, no.12, pp.1042 - 1047, 1999-12 |
Low-noise AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor recessed by electron cyclotron resonance plasma etching Lee, JH; Choi, HT; Lee, CW; Yoon, HS; Park, BS; Park, Chul Soon, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.34, no.2, pp.150 - 153, 1999-02 |
Luminescence of bound excitons in epitaxial ZnO thin films grown by plasma-assisted molecular beam epitaxy Jung, Yeon Sik; Choi, WK; Kononenko, OV; Panin, GN, JOURNAL OF APPLIED PHYSICS, v.99, no.1, pp.365 - 370, 2006-01 |
Magnetic and Electronic Properties of a Mn Delta-doping GaN Layer Jeon, HC; Lee, SJ; Kang, TW; Chang, Kee-Joo; Yeo, Yung Kee; George, TF, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.58, pp.1361 - 1364, 2011-05 |
Magnetic phases in polycrystalline Si1-xMnx semiconductors grown by MBE Kim, HK; Kwon, D; Kim, JH; Ihm, YE; Kim, D; Kim, H; Baek, JS; et al, JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.282, pp.244 - 247, 2004 |
Meltback Etching and Regrowth of GaAs/AlGaAs in Liquid Phase Epitaxy for Fabrication of Microlens G.S.Cho; S.H.Hahm; Kwon, Young Se, JOURNAL OF ELECTRONIC MATERIALS, v.22, no.4, pp.353 - 359, 1993 |
Method of determining potential barrier heights at submonolayer AlAs/GaAs heterointerfaces Kim, GH; Simmons, MY; Liang, CT; Ritchie, DA; Churchill, AC; Sim, Heung-Sun; Chang, Kee-Joo; et al, PHYSICAL REVIEW B, v.64, no.16, pp.165313 - 165313, 2001-10 |
Microstructural and interband transition properties of vertically stacked InAs/GaAs self-assembled quantum dots embedded in modulation-doped heterostructures Kim, TW; Lee, DU; Choo, DC; Kim, HJ; Lee, HS; Lee, JeongYong; Kim, MD, APPLIED PHYSICS LETTERS, v.79, no.1, pp.33 - 35, 2001-07 |
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