Showing results 1 to 19 of 19
Carrier relaxation in Si/SiO2 quantum dots Prokofiev, A. A.; Goupalov, S. V.; Andrey, S. Moskalenko; Poddubny, A. N.; Yassievich, I. N., PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.41, no.6, pp.969 - 971, 2009-05 |
Direct Bandgap Optical Transitions in Si Nanocrystals Prokofiev, A. A.; Andrey, S. Moskalenko; Yassievich, I. N.; de Boer, W. D. A. M.; Timmerman, D.; Zhang, H.; Buma, W. J.; et al, JETP LETTERS, v.90, no.12, pp.758 - 762, 2009-12 |
Electron-beam-induced formation of Zn nanocrystal islands in a SiO2 layer Kim, TW; Shin, JW; Lee, JeongYong; Jung, JH; Lee, JW; Choi, WK; Jin, S, APPLIED PHYSICS LETTERS, v.90, no.5, pp.153 - 157, 2007-01 |
Energy transfer in Er-doped SiO(2) sensitized with si nanocrystals Izeddin, I.; Timmerman, D.; Gregorkiewicz, T.; Andrey, S. Moskalenko; Prokofiev, A. A.; Yassievich, I. N.; Fujii, M., PHYSICAL REVIEW B, v.78, no.3, 2008-07 |
Enhanced formation of luminescent nanocrystal Si embedded in Si/SiO2 superlattice by excimer laser irradiation Daigil Cha; Shin, JungHoon; In-Hyuk Song; Min-Koo Han, APPLIED PHYSICS LETTERS, v.84, pp.1287 - 1289, 2004-02 |
Excitation of Er3+ ions in SiO2 with Si nanocrystals Prokofiev, A. A.; Andrey, S. Moskalenko; Yassievich, I. N., SEMICONDUCTORS, v.42, no.8, pp.971 - 979, 2008-08 |
Formation mechanisms of a nano-island array of Zn nanocrystals embedded in a SiO2 nanowire by using electrospinning and electron-beam irradiation Shin, J. W.; Lee, JeongYong; Ryu, J. T.; Kim, T. W., CURRENT APPLIED PHYSICS, v.11, no.3, pp.687 - 691, 2011-05 |
In situ characterization of stoichiometry for the buried SiOx layers in SiOx/SiO2 superlattices and the effect on the photoluminescence property Kim, KJ; Moon, DW; Hong, SH; Choi, SH; Yang, MS; Jhe, JH; Shin, JungHoon, THIN SOLID FILMS, v.478, pp.21 - 24, 2005-05 |
Metal-oxide-semiconductor field effect transistor using oxidized mu c-Si/ultrathin oxide gate structure Baik, SJ; Choi, JH; Lee, JeongYong; Lim, Koeng Su, SUPERLATTICES AND MICROSTRUCTURES, v.28, no.5-6, pp.477 - 483, 2000 |
Multiphonon relaxation of moderately excited carriers in Si/SiO2 nanocrystals Andrey, S. Moskalenko; Berakdar, J.; Poddubny, A. N.; Prokofiev, A. A.; Yassievich, I. N.; Goupalov, S. V., PHYSICAL REVIEW B, v.85, no.8, 2012-02 |
Nanosecond dynamics of the near-infrared photoluminescence of Er-doped SiO2 sensitized with Si nanocrystals Izeddin, I.; Andrey, S. Moskalenko; Yassievich, I. N.; Fujii, M.; Gregorkiewicz, T., PHYSICAL REVIEW LETTERS, v.97, no.20, 2006-11 |
Oxidation of Si during the growth of SiOx by ion-beam sputter deposition: In situ x-ray photoelectron spectroscopy as a function of oxygen partial pressure and deposition temperature Kim, Kyung Joong; Kim, Jeong Won; Yang, Moon-Seung; Shin, JungHoon, PHYSICAL REVIEW B, v.74, no.15, 2006-10 |
Temperature and Magnetic-Field Dependence of Radiative Decay in Colloidal Germanium Quantum Dots Robel, Istvan; Shabaev, Andrew; Lee, DohChang; Schaller, Richard D.; Pietryga, Jeffrey M.; Crooker, Scott A.; Efros, Alexander L.; et al, NANO LETTERS, v.15, no.4, pp.2685 - 2692, 2015-04 |
The formation mechanism of periodic Zn nanocrystal arrays embedded in an amorphous layer by rapid electron beam irradiation Shin, Jae Won; Lee, JeongYong; No, Y. S.; kim, T. W.; Choi, W. K.; Jin, S., NANOTECHNOLOGY, v.19, no.29, 2008-07 |
Theory of energy transfer between Er3+ ions and carriers confined in Si nanocrystals in SiO2 matrix Prokofiev, A. A.; Andrey, S. Moskalenko; Yassievich, I. N., MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.146, no.1-3, pp.121 - 125, 2008-01 |
Transformation mechanism of n-butyl terminated Si nanoparticles embedded into Si1-xCx nanocomposites mixed with Si nanoparticles and C atoms Shin J.W.; Oh D.H.; Kim T.W.; Cho W.J., APPLIED SURFACE SCIENCE, v.255, no.9, pp.5067 - 5070, 2009 |
Transformation mechanisms from metallic Zn nanocrystals to insulating ZnSiO(3) nanocrystals in a SiO(2) matrix due to thermal treatment Yuk, Jong Min; Lee, Jeong-Yong; No, Y. S.; Kim, T. W.; Choi, W. K., APPLIED PHYSICS LETTERS, v.93, no.22, 2008-12 |
Ultralarge capacitance-voltage hysteresis and charge retention characteristics in metal oxide semiconductor structure containing nanocrystals deposited by ion-beam-assisted electron beam deposition Kim, Y; Park, KH; Chung, TH; Bark, HJ; Yi, JY; Choi, WC; Kim, EK; et al, APPLIED PHYSICS LETTERS, v.78, no.7, pp.934 - 936, 2001-02 |
Zinc nanodots formation by low-temperature photo metal-organic chemical vapor deposition method for memory application Bang, K; Kim, S; Kwak, J; Lim, Koeng Su, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.45, pp.L508 - L511, 2006-05 |
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