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Showing results 6 to 10 of 10

6
Femtosecond dynamics of semiconductor microcavity polaritons in the nonlinear regime

Rhee, June-Koo Kevin; Citrin, DS; Norris, TB; Arakawa, Y; Nishioka, M, SOLID STATE COMMUNICATIONS, v.97, no.11, pp.941 - 946, 1996-03

7
High power performance of nonbiased optical bistable devices using multiple shallow quantum well p-i-n-i-p diodes

Kwon, OK; Lee, KS; Lee, EH; Ahn, Byung Tae, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.37, no.3B, pp.1418 - 1420, 1998-03

8
InGaAs layer effect on the growth of AlGaAs/GaAs quantum wires on V-grooved InGaAs/GaAs substrates

Lee, MS; Kim, EK; Kim, SI; Hwang, SM; Kim, CK; Min, SK; Lee, JeongYong, SOLID STATE COMMUNICATIONS, v.101, no.9, pp.705 - 708, 1997-03

9
Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition

Cho, HK; Lee, JeongYong; Kim, CS; Yang, GM; Sharma, N; Humphreys, C, JOURNAL OF CRYSTAL GROWTH, v.231, no.4, pp.466 - 473, 2001-11

10
Room temperature photoluminescence studies of delta-doped pseudomorphic high electron mobility transistor AlGaAs/InGaAs/GaAs structures

Lu, W; Lee, JH; Yoon, HS; Park, Chul Soon; Pyun, KE; Lee, HG; Suh, KS; et al, SOLID STATE COMMUNICATIONS, v.99, no.10, pp.713 - 716, 1996-09

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